相关论文: Differences in Sb2Te3 growth by pulsed laser and s…
Molecular beam epitaxy (MBE) is a state-of-the-art technique for depositing thin films with precise stoichiometric control. However, when depositing oxides of perovskite-type ABO3, this process becomes challenging as controlling the flux…
To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy…
High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature…
Perovskite chalcogenides have emerged as a new class of semiconductors with tunable band gap in the visible-infrared region. High quality thin films are critical to understand the fundamental properties and realize the potential…
Despite numerous studies on three-dimensional topological insulators (3D TIs), the controlled growth of high quality (bulk-insulating and high mobility) TIs remains a challenging subject. This study investigates the role of growth methods…
Defect-free epitaxial growth of 2D materials is one of the holy grails for a successful integration of van der Waals (vdW) materials in the semiconductor industry. The large-area (quasi-)vdW epitaxy of layered 2D chalcogenides is…
The local epitaxial growth of pulsed laser deposited Ca$_2$MnO$_4$ films on polycrystalline spark plasma sintered Sr$_2$TiO$_4$ substrates was investigated to determine phase formation and preferred epitaxial orientation relationships…
We report the structural and transport properties of LaNiO3 thin films prepared by pulsed laser deposition technique. To understand the effects of film thickness, lattice mismatch and grain size on transport properties, various oriented…
A special shaping of YAG:Nd^{3+} laser beam profile has been found to improve homogeneity and T_c of YBa_2Cu_3O_{7-\delta} films being deposited by the pulsed laser. Targets of a considerably non-stoichiometric composition and substrates of…
The Sb2Te3 crystals are grown using the conventional self flux method via solid state reaction route, by melting constituent elements (Sb and Te) at high temperature (850 C), followed by slow cooling (2 C per hour).The weak anti…
By comparing the impact of established laser smoothing techniques like Random Phase Plates (RPP) and Smoothing by Spectral Dispersion (SSD) to the concept of "Spike Trains of Uneven Duration and Delay" (STUD pulses) on the amplification of…
Heteroepitaxial spinel ferrites NiFe2O4 and CoFe2O4 films have been prepared by pulsed laser deposition (PLD) at various temperatures (175 - 690 {\deg}C) under ozone/oxygen pressure of 10 mTorr. Due to enhanced kinetic energy of ablated…
Ternary chalcogenides such as the parkerites and shandites are a broad class of materials exhibiting rich diversity of transport and magnetic behavior as well as an array of topological phases including Weyl and Dirac nodes. However, they…
The electrical detection of the surface states of topological insulators is strongly impeded by the interference of bulk conduction, which commonly arises due to pronounced doping associated with the formation of lattice defects. As…
Inorganic halide perovskites have become attractive for many optoelectronic applications due to their outstanding properties. While chemical synthesis techniques have been successful in producing high-quality perovskite crystals, scaling up…
Hot wall technique was used to grow block single crystal films of Bi_2Te_3 and solid solutions of Bi_(0.5)Sb_(1.5)Te_3 on mica (muscovite) substrates. X-ray diffraction studies demonstrated that the crystalline c-axis in the films was…
We have investigated morphology of the lateral surfaces of PbTe crystal samples grown from melt by the Bridgman method sputtered by Ar+ plasma with ion energy of 50-550 eV for 5-50 minutes under Secondary Neutral Mass Spectrometry (SNMS)…
CeCoIn5 (Co115) thin films have been grown on Al2O3 (000l) substrates through the pulsed laser deposition (PLD). The films are grown mainly along the c-axis, with CeIn3 and In-related alloys. The rock-salt type grains are nucleated, where…
High quality vanadium sesquioxide V2O3 films (170-1100 {\AA}) were grown using the pulsed laser deposition technique on (0001)-oriented sapphire substrates, and the effects of film thickness on the lattice strain and electronic properties…
The crystal growth of isotactic polystyrene (it-PS) is investigated in very thin, 11 nm thick films. The it-PS crystals grown in the thin films show quite different morphology from that in the bulk. With decreasing crystallization…