相关论文: Differences in Sb2Te3 growth by pulsed laser and s…
Aluminum oxide thin films were deposited on silicon substrates under different deposition conditions using pulse pressure metal organic chemical vapour deposition (PP-MOCVD). The current study investigates into the growth mechanism of the…
Thin films of the misfit cobaltite Ca3Co4O9 were grown on (0001)-oriented (c-cut) sapphire substrates, using the pulsed-laser deposition techniques. The dependence of the thermoelectric/transport properties on the film growth conditions was…
Pulse-shape discrimination (PSD) is usually achieved using the different fast and slow decay components of inorganic scintillators, such as BaF2, CsI:Tl, etc. However, LaBr3:Ce is considered to not possess different components at room…
Chalcogenide phase-change materials (PCMs) are widely applied in electronic and photonic applications, such as non-volatile memory and neuro-inspired computing. Doped Sb$_2$Te alloys are now gaining increasing attention for on-chip photonic…
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray…
We present a comparative study of copper film growth with a constant energy neutral beam, thermal evaporation, dc magnetron sputtering, high-power impulse magnetron sputtering (HiP-IMS), and bipolar HiPIMS, through molecular dynamics…
We report on epitaxial growth in thin-film synthesis of a polar magnetic semiconductor AgCrSe2 on lattice-matched yttria-stabilized zirconia (111) substrate by pulsed-layer deposition (PLD). By using Ag-rich PLD target to compensate for Ag…
We report the growth of highly c-axis oriented topological insulator (TI) BiSbTe1.5Se1.5 (BSTS) thin films by pulsed laser deposition (PLD) technique. The various growth parameters such as substrate temperature, Argon pressure in the…
To harness the intriguing properties of two-dimensional van der Waals (vdW) ferromagnets (FMs) for versatile applications, the key challenge lies in the reliable material synthesis for scalable device production. Here, we demonstrate the…
We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…
The high cost of substrates for III-V growth can be cost limiting for technologies that require large semiconductor areas. Thus, being able to separate device layers and reuse the original substrate is highly desirable, but existing…
Broadening the variety of two-dimensional (2D) materials and improving the synthesis of ultrathin films are crucial to the development of the semiconductor industry. As a state-of-the-art 2D material, Ga2Se2 has attractive optoelectronic…
A femtosecond laser-irradiated crystallizing technique is tried to convert amorphous Sb2Te3 film into crystalline film. Sensitive coherent phonon spectroscopy (CPS) is used to monitor the crystallization of amorphous Sb2Te3 film at the…
Van der Waals layered chalcogenide-based flexible thermoelectric devices show great potential for applications in wearable electronics. However, materials that are both highly deformable and exhibit superior thermoelectric performance are…
The growth of high-quality superconducting thin film on silicon substrates is essential for quantum computing, and low signal interconnects with industrial compatibility. Recently, the growth of $\alpha$-Ta (alpha-phase tantalum) thin films…
Ga2O3 thin films were deposited by reactive magnetron sputtering from a liquid gallium target. The influence of deposition temperature, substrate type, and discharge parameters on the structural and electrical properties was systematically…
Using two different experimental techniques, namely, chemical vapor deposition (CVD) and physical vapor deposition (PVD), we deposited a Lead sulphide (PbS) thin films with a very small lifetime. We investigated the morphology of the…
Physical vapor high-temperature deposition of CdTe thin films is one of the main methods for preparing high-efficiency CdTe solar cells, but high-temperature deposition also has an impact on the internal structure of the film. The…
We demonstrate that kinetics play an important role in the epitaxial growth of Fe$_3$GeTe$_2$ (FGT) van der Waals (vdW) ferromagnetic films by molecular beam epitaxy. By varying the deposition rate, we control the formation or suppression…
Recent work has demonstrated microscale compressive plasticity in pulse laser deposited (PLD) amorphous alumina (a-Al2O3). This work explores microscale bending plasticity and fracture behavior of a-Al2O3 films deposited using three…