相关论文: Nanoscale dynamics during self-organized ion beam …
Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early…
Investigating the relationship between structure and dynamical processes is a central goal in condensed matter physics. Perhaps the most noted relationship between the two is the phenomenon of de Gennes narrowing, in which relaxation times…
The off-normal ion irradiation of semiconductor materials is seen to induce nanopatterning effects. Different theories are proposed to explain the mechanisms that drive self-reorganization of amorphisable surfaces. One of the prominent…
Two-level modeling for nanoscale pattern formation on silicon target by Ar$^+$ ion sputtering is presented. Phase diagram illustrating possible nanosize surface patterns is discussed. Scaling characteristics for the structure wavelength…
The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration…
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…
Off-normal low energy ion beam sputtering of solid surfaces often leads to morphological instabilities resulting in the spontaneous formation of ripple structures in nanometer length scales. In the case of Si surfaces at ambient…
We have reported the dependence of projectile mass, chemical reactivity and effect of molecular beams on the ion induced nano structure formation, when 8 keV He1+, N1+, O1+, Ar1+ atomic ions and 16 keV N21+ and O21+ molecular ions are…
We report experiments on surface nanopatterning of Si targets which are irradiated with 2 keV Ar + ions impinging at near-glancing incidence, under concurrent co-deposition of Au impurities simultaneously extracted from a gold target by the…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
In this paper evolution of silicon surface topography, under low energy ion bombardment, is investigated at higher oblique incident angles in the range of 63\degree-83\degree. Si(100) substrates were exposed to 500 eV argon ions. Different…
Recent experimental studies focusing on the morphological properties of surfaces eroded by ion-bombardment report the observation of self-affine fractal surfaces, while others provide evidence about the development of a periodic ripple…
Erosion by ion-beam sputtering (IBS) of amorphous targets at off-normal incidence frequently produces a (nanometric) rippled surface pattern, strongly resembling macroscopic ripples on aeolian sand dunes. Suitable generalization of…
Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
The ion-bombardment induced nanopatterning of Si(001) has been simulated by atomistic simulations with and without Fe impurity. The surface contamination has been simulated by using a new force field developed for FeSi. This is a fitted…
Ion beam irradiation of semiconductors is a method to produce regular periodic nanoscale patterns self-organized on wafer scale. At low temperatures, the surface of semiconductors is typically amorphized by the ion beam. Above a material…
Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below…
We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is…
We have reported the dependence of projectile mass along with the chemical reactivity and nonlinear effects on ion beam induced nano structure formation when 8 keV He1+, N1+, O1+, Ar1+ atomic ions and 16 keV N21+ and O21+ molecular ions are…