相关论文: Tunable band-gap and isotropic light absorption fr…
We present optical investigations of hybrid plasmonic nanosystems consisting of lithographically defined plasmonic Au-waveguides or beamsplitters on GaAs substrates coupled to proximal self-assembled InGaAs quantum dots. We designed a…
We report four probe measurements of the low field magnetoresistance in single core/shell GaAs/MnAs nanowires synthesized by molecular beam epitaxy, demonstrating clear signatures of anisotropic magnetoresistance that track the…
Crystal phase semiconductor heterostructures allow for electron confinement without uncertainties caused by chemical intermixing found in material heterostructures and are candidates for next generation optoelectronics devices ranging from…
We show that fully self-assembled optically-active quantum dots (QDs) embedded in MBE-grown GaAs/AlGaAs core-shell nanowires (NWs) are coupled to the NW mechanical motion. Oscillations of the NW modulate the QD emission energy in a broad…
Chip-based cavity optomechanical systems are being considered for applications in sensing, metrology, and quantum information science. Critical to their development is an understanding of how the optical and mechanical modes interact,…
Electronic structures for InxGa1-xAs nanowires with [100], [110], and [111] orientations and critical dimensions of approximately 2 nm are treated within the framework of density functional theory. Explicit band structures are calculated…
Beta gallium oxide (\beta-Ga2O3) is an emerging ultrawide band gap (4.5 - 4.9 eV) semiconductor with attractive properties for future power electronics, optoelectronics, and sensors for detecting gases and ultraviolet radiation. \beta-Ga2O3…
Black phosphorus (BP), an emerging two-dimensional (2D) material with intriguing optical properties, forms a promising building block in optics and photonics devices. In this work, we propose a simple structure composed of BP sandwiched by…
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…
2D MoS2 attracts increasing attention for its application in flexible electronics and photonic devices. For 2D material optoelectronic devices, light absorption of the molecularly thin 2D absorber would be one of the key limiting factors in…
Doped graphene emerges as a strong contender for active plasmonic material in the mid-infrared wavelengths due to the versatile external-control of its permittivity-function and also its highly-compressed graphene surface plasmon (GSP)…
Strain engineering in semiconductor nanostructures offers a promising route to optimize electronic and optical properties for advanced quantum technologies. This study explores the relationship between core and shell thicknesses and strain…
Gigahertz acoustic resonators have the potential to advance data processing and quantum communication. However, they are expensive and lack responsiveness to external stimuli, limiting their use in sensing applications. In contrast,…
We report on the growth of axial InAs-on-GaAs nanowire heterostructures on silicon by molecular beam epitaxy using 20 nm diameter Au catalysts. First, the growth parameters of the GaAs nanowire segment were optimized to achieve a pure…
The adsorption of two different organic molecules cyanidin glucoside (C$_{21}$O$_{11}$H$_{20}$) and TA-St-CA on anatase (101) and (001) nanowires have been investigated using the standard and the range separated hybrid density functional…
In this paper, we have designed and investigated the performance of radial GaAs/AlGaAs pin junction nanocone array solar cells by performing coupled optoelectronic simulations to obtain the most optimal design configuration based on its…
In this paper we show how to link the electronic structures of two III-V systems, one a direct gap material, GaAs, and the other an indirect gap material, GaP, from their bulks right down to the shape of thin nanowires. GaAs and GaP bulk…
The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and…
We demonstrate a new concept for reconfigurable nanophotonic devices exploiting ultrafast nonlinear control of shaped wavefronts in a multimode nanomaterial consisting of semiconductor nanowires. Femtosecond pulsed laser excitation of the…
The GaAs-based material system is well-known for the implementation of InAs quantum dots (QDs) with outstanding optical properties. However, these dots typically emit at a wavelength of around 900nm. The insertion of a metamorphic buffer…