相关论文: Tunable band-gap and isotropic light absorption fr…
Anion substitution with bismuth (Bi) in III-V semiconductors is an effective method for experimental engineering of the band gap Eg at low Bi concentrations, in particular in gallium arsenide (GaAs). The inverse Bi-concentration dependence…
An ideal solar thermal absorber has a sharp transition between high and low absorptance at the wavelength where the blackbody emissive power begins to exceed the solar irradiance. However, most real selective absorbers have a fairly broad…
We demonstrate an efficient double-layer light absorber by exciting plasmonic phase resonances. We show that the addition of grooves can cause mode splitting of the plasmonic waveguide cavity modes and all the new resonant modes exhibit…
On-chip quantum information processing requires controllable quantum light sources that can be operated on-demand at high-speeds and with the possibility of in-situ control of the photon emission wavelength and its optical polarization…
The structural and optical properties of 3 different kinds of GaAs nanowires with 100% zinc-blende structure and with an average of 30% and 70% wurtzite are presented. A variety of shorter and longer segments of zinc-blende or wurtzite…
We review our recent progresses on frequency conversion in integrated devices, focusing primarily on experiments based on strip-loaded and quantum-well intermixed AlGaAs waveguides, and on CMOS-compatible high-index doped silica glass…
Optical switches are one of the most important elements of integrated photonics. Here, we designed, fabricated and characterized several nanophotonic optical switches (NOSs) in silicon that exhibit ultra-compact footprint, along with…
Straight, axial InAs nanowire with multiple segments of GaInAs were grown. High resolution X-ray energy-dispersive spectroscopy (EDS) mapping reveal the distribution of group III atoms at the axial interfaces and at the sidewalls.…
We investigate the optomechanical properties of tensile-strained ternary InGaP nanomembranes grown on GaAs. This material system combines the benefits of highly strained membranes based on stoichiometric silicon nitride, with the unique…
We report on fabrication of spatially-coherent columnar plasmonic nanostructure superlattice-type thin films with high porosity and strong optical anisotropy using glancing angle deposition. Subsequent and repeated depositions of silicon…
GaSb:N displays promise towards realization of optoelectronic devices accessing the mid-infrared wavelength regime. Theoretical and experimental results on its electronic and optical properties are however few. To address this, we present a…
The electronic, optical and magnetic properties of graphene nanoribbons (GNRs) can be engineered by controlling their edge structure and width with atomic precision through bottom-up fabrication based on molecular precursors. This approach…
Finding novel atomically-thin heterostructures and understanding their characteristic properties are critical for developing better nanoscale optoelectronic devices. In this study, we investigate the electronic and optical properties of…
Bismuth has recently attracted interest in connection with Na-ion battery anodes due to its high volumetric capacity. It reacts with Na to form Na$_3$Bi which is a prototypical Dirac semimetal with a nontrivial electronic structure.…
We used density-functional theory based first principles simulations to study the effects of uniaxial strain and quantum confinement on the electronic properties of germanium nanowires along the [110] direction, such as the energy gap and…
Electron-phase modulation in magnetic and electric fields will be presented in In_(0.75)Ga_(0.25)As Aharonov-Bohm (AB) rings. The zero Schottky barrier of this material made it possible to nanofabricate devices with radii down to below 200…
N-type doping of GaAs nanowires has proven to be difficult because the amphoteric character of silicon impurities is enhanced by the nanowire growth mechanism and growth conditions. The controllable growth of n-type GaAs nanowires with…
Central to the field of nanophotonics is the ability to engineer the flow of light through nanoscale structures. These structures often have permanent working spectral ranges and optical properties that are fixed during fabrication. Quantum…
We present a systematic study of the current-voltage characteristics and electroluminescence of gallium nitride (GaN) nanowire on silicon (Si) substrate heterostructures where both semiconductors are n-type. A novel feature of this device…
In the last decade, remarkable advances in integrated photonic technologies have enabled table-top experiments and instrumentation to be scaled down to compact chips with significant reduction in size, weight, power consumption, and cost.…