相关论文: Tunable band-gap and isotropic light absorption fr…
Active nanowires and nanofibers can be realized by the electric-field induced stretching of polymer solutions with sufficient molecular entanglements. The resulting nanomaterials are attracting an increasing attention in view of their…
The current work explores a geometrically engineered dual gate GaAs nanowire FET with state of the art miniaturized dimensions for high performance charge qubit operation at room temperature. Relevant gate voltages in such device can create…
In this article, we report the first observation of nanosecond laser induced transient dual absorption bands, one in the bandgap (TA1) and another in the sub-bandgap (TA2) regions of a-Ge5As30Se65 thin films. Strikingly, these bands are…
Structures and electronic properties of rhombohedral [111] and [110] bismuth nanowires are calculated with the use of density functional theory. The formation of an energy band gap from quantum confinement is studied and to improve…
Active metasurfaces promise spatiotemporal control over optical wavefronts, but achieving high-speed modulation with pixel-level control has remained an unmet challenge. While local phase control can be achieved with nanoscale optical…
The Janus structure, by combining properties of different transition metal dichalcogenide (TMD) monolayers in a single polar material, has attracted increasing research interest because of their particular structure and potential…
AlGaAs/GaAs coatings are being considered as coating candidates for gravitational-wave detectors. In this paper we investigate the birefringence properties of this crystalline semiconductor material by modulating the optical illumination on…
Tunable light filters are critical components for many optical applications in which light in-coupling, out-coupling or rejection is crucial, such as lasing, sensing, photovoltaics and information and communication technology. For this…
Gallium oxide (Ga2O3) is a wide-band-gap semiconductor promising for UV sensors and high power transistor applications, with Baliga's figure of merit that far exceeds those of GaN and SiC, second only to diamond. Engineering its band…
Here we report on non-uniform shell growth of In(x)Ga(1-x)As onto GaAs nanowire (NW) core by molecular beam epitaxy (MBE). The growth was realized on pre-patterned silicon substrates with pitch size (p) ranging from 0.1 um to 10 um.…
Two-dimensional materials (2DM) and their derived heterostructures have electrical and optical properties that are widely tunable via several approaches, most notably electrostatic gating and interfacial engineering such as twisting. While…
We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…
Next-generation optoelectronic devices and photonic circuitry will have to incorporate on-chip compatible nanolaser sources. Semiconductor nanowire lasers have emerged as strong candidates for integrated systems with applications ranging…
The interplay between electronic properties and optical response enables the realization of novel types of materials with tunable responses. Superconductors are well known to exhibit profound changes in the electronic structure related to…
The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector, and frequency of light. Integration of semiconductors into the…
We obtain the the long-wavelength polar optical vibrational modes of semiconductor core-shell nanowires by means of a phenomenological continuum model. A basis for the space of solutions is derived, and by applying the appropriate boundary…
We demonstrate the laser-induced control over spin-wave (SW) transport in the magnonic crystal (MC) waveguide formed from the semiconductor slab placed on the ferrite film. We considered bilayer MC with periodical grooves performed on the…
Bottom up nanowires are attractive for realizing semiconductor devices with extreme heterostructures because strain relaxation through the nanowire sidewalls allows the combination of highly lattice mismatched materials without creating…
The optical properties of a spherical topological insulator embedded concentrically in a single-electron system consisting of a core-shell GaAs quantum dot are analyzed, when the system is under a uniform external magnetic field. The…
Photoconductive devices based on ultra-wide-bandgap (UWBG) materials offer a promising pathway toward compact, high-voltage (HV) optoelectronic and optical sensing in harsh environments. In this Letter, we report field-tunable nonlinear…