相关论文: Accuracy of Y-function methods for parameters extr…
Two-dimensional molybdenum disulfide (MoS2) is an excellent channel material for ultra-thin field effect transistors. However, high contact resistance across the metal-MoS2 interface continues to limit its widespread realization. Here,…
Over the last few years, $ab~initio$ methods have become an increasingly popular tool to evaluate intrinsic carrier transport properties in 2D materials. The lack of experimental information, and the progress made in the development of DFT…
The results of an experimental study of interaction quantum correction to the conductivity of two-dimensional electron gas in A$_3$B$_5$ semiconductor quantum well heterostructures are presented for a wide range of $T\tau$-parameter…
Force-aware grasping is an essential capability for most robots in practical applications. Especially for compliant grippers, such as Fin-Ray grippers, it still remains challenging to build a bidirectional mathematical model that mutually…
We study the low-temperature electron mobility of InSb nanowires. We extract the mobility at 4.2 Kelvin by means of field effect transport measurements using a model consisting of a nanowire-transistor with contact resistances. This model…
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…
The universal conductance fluctuations of quasi-two-dimensional systems are analyzed with experimental considerations in mind. The traditional statistical metrics of these fluctuations (such as variance) are shown to have large statistical…
Atomically thin semiconducting MoS2 is of great interest for high-performance flexible electronic and optoelectronic devices. Initial measurements using back-gated field-effect transistor (FET) structures on SiO2 yielded mobility of 1-50…
Improving carrier mobilities of two-dimensional (2D) semiconductors is highly sought after. Recently, Ng. et al. [1] reported rippled molybdenum disulfide (MoS$_2$) transistors on bulged silicon nitride (SiN$_x$) substrates that exhibit…
We study the interaction-induced quantum correction \delta\sigma_{\alpha\beta} to the conductivity tensor of electrons in two dimensions for arbitrary T\tau (where T is the temperature and \tau the transport scattering time), magnetic…
Two-dimensional (2D) materials have great potential for use in future electronics due to their atomically thin nature which withstands short channel effects and thus enables better scalability. Device scaling is the process of reducing all…
Two-dimensional material (2DM)-based field-effect transistors (FETs), such as molybdenum disulfide (MoS${_2}$)-FETs, have gained significant attention for their potential for ultra-short channels, thereby extending Moore's law. However,…
The mobility-degradation-based model for the drain-to-source or output resistance of a graphene field-effect-transistor is linearized here using a Taylor series approximation. This simplification is shown to be valid from magnitudes of the…
I analyze electron transport through a Y-junction formed by helical edge states of a two-dimensional topological insulator (2DTI), focusing on the strongly interacting regime. An experimentally motivated device geometry and a…
Strong repulsive interactions within a one dimensional Fermi system in a two-probe configuration normally lead to a reduced off-resonance conductance. We show that if the repulsive interaction extends to the contact regions, a strong…
We develop a simulation framework for electrostatic and transport modeling of 2D Topological insulator field-effect transistor (2D TIFETs), based solely on first-principles calculations using density functional theory (DFT). We find that…
In this article, a novel two-path model is proposed to quantitatively explain sub-threshold characteristics of back-gated Schottky barrier FETs (SB-FETs) from 2D channel materials. The model integrates the 'conventional' model for SB-FETs…
An analytical expression is derived for the conductance modulation of a ballistic two dimensional Datta-Das Spin Field Effect Transistor (SPINFET) as a function of gate voltage. Using this expression, we show that the recently observed…
A combination of the memory function formalism and time-dependent density-functional theory is applied to transport in dilute magnetic semiconductors. The approach considers spin and charge disorder and electron-electron interaction on an…
Temperature-dependent I-V and C-V spectroscopy of single InAs nanowire field-effect transistors were utilized to directly shed light on the intrinsic electron transport properties as a function of nanowire radius. From C-V…