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The nanofabrication technology has taught us that an $m$-dimensional confining potential imposed upon an $n$-dimensional electron gas paves the way to a quasi-($n-m$)-dimensional electron gas, with $m \le n$ and $1\le n, m \le 3$. This is…

介观与纳米尺度物理 · 物理学 2013-06-18 Manvir S. Kushwaha

Spectrally-tunable quantum-light sources are key elements for the realization of long-distance quantum communication. A deterministically fabricated single-photon source with a photon-extraction efficiency of {\eta}=(20 +- 2) % and a tuning…

介观与纳米尺度物理 · 物理学 2018-05-29 S. Fischbach , M. v. Helversen , M. Schmidt , A. Kaganskiy , R. Schmidt , A. Schliwa , T. Heindel , S. Rodt , S. Reitzenstein

Scanning Electron Microscopes (SEM) with low energy electron sources (accelerating voltage of less than 1000V) have important application requirements in many application scenarios. Tunneling junction can potentially achieve low-voltage and…

应用物理 · 物理学 2024-06-25 Zhexuan Wang , Fang Liu , Kaiyu Cui , Xue Feng , Wei Zhang , Yidong Huang

The electrical machinery core is formed with a ferromagnetic material that offers high magnetic properties. As ferromagnetic materials have high relative magnetic permeability, they are important in the formation of electromagnetic device…

应用物理 · 物理学 2022-09-21 Shinthia Binte Eskender , Anupam Saha , Shaikh Ishtiaque Ahmed

Electrostatic gates are of paramount importance for the physics of devices based on high-mobility two-dimensional electron gas (2DEG) since they allow depletion of electrons in selected areas. This field-effect gating enables the…

介观与纳米尺度物理 · 物理学 2015-09-23 K. Bennaceur , B. A. Schmidt , S. Gaucher , D. Laroche , M. P. Lilly , J. L. Reno , K. W. West , L. N. Pfeiffer , G. Gervais

High mobility two-dimensional electron gases (2DEGs) underpin today's silicon based devices and are of fundamental importance for the emerging field of oxide electronics. Such 2DEGs are usually created by engineering band offsets and charge…

强关联电子 · 物理学 2016-12-13 S. McKeown Walker , F. Y. Bruno , F. Baumberger

We introduce a simple and practical method to create ultrashort intense optical vortices for applications involving high-intensity lasers. Our method utilizes femtosecond laser pulses to laser-etch grating lines into laser-quality gold…

光学 · 物理学 2009-11-13 J. Strohaber , T. Scarborough , C. J. G. J. Uiterwaal

Layer number-dependent band structures and symmetry are vital for the electrical and optical characteristics of two-dimensional (2D) transition metal dichalcogenides (TMDCs). Harvesting 2D TMDCs with tunable thickness and properties can be…

Electrical measurement of nano-scale devices and structures requires skills and hardware to make nano-contacts. Such measurements have been difficult for number of laboratories due to cost of probe station and nano-probes. In the present…

仪器与探测器 · 物理学 2020-06-18 Rakesh K. Prasad , Dilip K. Singh

We describe the fabrication and characterization of solid 3-dimensional electrodes in direct contact with microfluidic channels, implemented using a single photolithography step, allowing operation in high-dielectric constant media.…

软凝聚态物质 · 物理学 2013-05-16 T. W. Herling , T. Müller , L. Rajah , J. N. Skepper , M. Vendruscolo , T. P. J. Knowles

Graphene is considered to be a promising material for future electronics. The envisaged transistor applications often rely on precision cutting of graphene sheets with nanometer accuracy. In this letter we demonstrate graphene-based quantum…

介观与纳米尺度物理 · 物理学 2010-07-27 S. Neubeck , L. A. Ponomarenko , F. Freitag , A. J. M. Giesbers , U. Zeitler , S. V. Morozov , P. Blake , A. K. Geim , K. S. Novoselov

The realization of reliable single photon emitters operating at high temperature and located at predetermined positions still presents a major challenge for the development of solid-state systems for quantum light applications. We…

The importance of a photon source that would be compatible with silicon circuitry is crucial for data communication networks. A photon source with energies ranging from UV to near infrared can be activated in Si as originationg from defects…

介观与纳米尺度物理 · 物理学 2015-09-11 Seref Kalem

We report on optically induced transport phenomena in freely suspended channels containing a two-dimensional electron gas (2DEG). The submicron devices are fabricated in AlGaAs/GaAs heterostructures by etching techniques. The photoresponse…

介观与纳米尺度物理 · 物理学 2011-07-25 C. Rossler , K. -D. Hof , S. Manus , S. Ludwig , J. P. Kotthaus , J. Simon , A. W. Holleitner , D. Schuh , W. Wegscheider

We present results of a fabrication-process development for the lithographic pattern transfer into the sub-100nm range by combining electron-beam lithography and reactive dry etching to obtain high quality niobium-based light-sensitive…

介观与纳米尺度物理 · 物理学 2010-11-23 H. Bartolf , K. Inderbitzin , L. B. Gómez , A. Engel , A. Schilling , H. -W. Hübers , A. Semenov , K. Il'in , M. Siegel

The reliable, deterministic production of trustworthy high-quality single photons is a critical component of discrete variable, optical quantum technology. For single-photon based fully error-corrected quantum computing systems, it is…

量子物理 · 物理学 2024-11-20 Sebastian Brandhofer , Casey R. Myers , Simon J. Devitt , Ilia Polian

A nanofabrication process for realizing optical nanoantennas carved from a single-crystal gold plate is presented in this communication. The method relies on synthesizing two-dimensional micron-size gold crystals followed by the dry etching…

This paper reports a few-layer black phosphorus thickness pattern fabricated by a top-down nanofabrication approach. This was achieved by a new wet etching process that can etch selected regions of few-layer black phosphorus with an atomic…

材料科学 · 物理学 2019-01-08 Teren Liu , Tao Fang , Karen Kavanagh , Guangrui , Xia

The physics basis for an electron-beam based Compton scattering (ECOS) x-ray source is investigated for single-shot experiments at major high energy density facilities such as the Omega Laser Facility, National Ignition Facility, and Z…

等离子体物理 · 物理学 2024-05-15 H. G. Rinderknecht , G. Bruhaug , V. Muşat , G. Gregori , H. Poole , G. W. Collins

We report quantum dots fabricated on very shallow 2-dimensional electron gases, only 30 nm below the surface, in undoped GaAs/AlGaAs heterostructures grown by molecular beam epitaxy. Due to the absence of dopants, an improvement of more…

介观与纳米尺度物理 · 物理学 2015-03-19 W. Y. Mak , F. Sfigakis , K. Das Gupta , O. Klochan , H. E. Beere , I. Farrer , J. P. Griffiths , G. A. C. Jones , A. R. Hamilton , D. A. Ritchie