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Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten…

材料科学 · 物理学 2017-11-22 Nicolas Onofrio , David Guzman , Alejandro Strachan

Study and comparison of over 30 examples of electron doped BaFe2As2 for transition metal (TM) = Co, Ni, Cu, and (Co/Cu mixtures) have lead to an understanding that the suppression of the structural/antiferromagnetic phase transition to low…

超导电性 · 物理学 2009-08-04 P. C. Canfield , S. L. Bud'ko , N. Ni , J. Q. Yan , A. Kracher

Monolayer transition-metal dichalcogenide (TMD) semiconductors exhibit strong excitonic effects and hold promise for optical and optoelectronic applications. Yet, electron doping of TMDs leads to the conversion of neutral excitons into…

The integration of transition metal dichalcogenides (TMDs) with ferroelectric substrates is a powerful strategy to modulate their electronic and optical properties. However, the use of relaxor ferroelectrics for this purpose remains…

材料科学 · 物理学 2025-05-06 D. Hernández-Pinilla , D. Cachago , Y. A. Xia , G. López-Polín , M. O Ramírez , L. E. Bausá

Monolayer TaIrTe$_4$ has emerged as an attractive material platform to study intriguing phenomena related to topology and strong electron correlations. Recently, strong interactions have been demonstrated to induce strain and dielectric…

We survey the state-of-the-art knowledge of ferroelectric and ferroelastic group-IV monochalcogenide monolayers. These semiconductors feature remarkable structural and mechanical properties, such as a switchable in-plane spontaneous…

介观与纳米尺度物理 · 物理学 2021-03-12 Salvador Barraza-Lopez , Benjamin M. Fregoso , John W. Villanova , Stuart S. P. Parkin , Kai Chang

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning…

Single crystalline Ba(Fe(1-x)TMx)2As2 (TM = Rh, Pd) series have been grown and characterized by structural, thermodynamic and transport measurements. These measurements show that the structural/magnetic phase transitions, found in pure…

超导电性 · 物理学 2009-07-28 N. Ni , A. Thaler , A. Kracher , J. Q. Yan , S. L. Bud'ko , P. C. Canfield

Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as…

材料科学 · 物理学 2026-01-21 Dante Zakhidov , Daniel A. Rehn , Evan J. Reed , Alberto Salleo

Two-dimensional materials are an emerging class of new materials with a wide range of electrical and optical properties and potential applications. Single-layer structures of semiconducting transition metal dichalcogenides are gaining…

Layered quasi-two-dimensional transition metal dichalcogenides (TMDCs), which can be readily made in ultrathin films, offer excellent opportunities for studying how dimensionality affects electronic structure and physical properties. Among…

The ability to switch between distinct states of polarization comprises the defining property of ferroelectrics. However, the microscopic mechanism responsible for switching is not well understood and theoretical estimates based on coherent…

材料科学 · 物理学 2022-11-08 Urko Petralanda , Thomas Olsen

Within the BaFe2As2 crystal lattice, we partially substitute thallium for barium and report the effects of interlayer coupling in Ba1-xTlxFe2As2 crystals. We demonstrate the unusual effects of magneto-elastic coupling and charge doping in…

超导电性 · 物理学 2016-11-11 A. S. Sefat , L. Li , H. B. Cao , M. A. McGuire , B. Sales , R. Custelcean , D. S. Parker

For the past few years, 2D ferroelectric materials have attracted strong interest for their potential in future nanoelectronics devices. The recent discovery of 2D ferroelectricity in twisted layers of insulating hexagonal boron nitride,…

Elastoresistance describes the relative change of a material's resistance when strained. It has two major contributions: strain induced geometric and electronic changes. If the geometric factor dominates, like in ordinary metals such as…

材料科学 · 物理学 2020-01-14 Na Hyun Jo , Lin-Lin Wang , Peter P. Orth , Sergey L. Bud'ko , Paul C. Canfield

The crystal structure of MoS$_2$ with strong covalent bonds in plane and weak Van der Waals interactions out of plane gives rise to interesting properties for applications such as solid lubrication, optoelectronics, and catalysis, which can…

材料科学 · 物理学 2021-07-28 Rijan Karkee , Enrique Guerrero , David A. Strubbe

Photostriction is predicted for SnS and SnSe monolayers, two-dimensional ferroelectrics with rectangular unit cells (the lattice vector $\mathbf{a}_1$ is larger than $\mathbf{a}_2$) and an intrinsic dipole moment parallel to $\mathbf{a}_1$.…

介观与纳米尺度物理 · 物理学 2017-06-07 Raad Haleoot , Charles Paillard , Mehrshad Mehboudi , Bin Xu , L. Bellaiche , Salvador Barraza-Lopez

The hunt for high temperature superfluidity has received new impetus from the discovery of atomically thin stable materials. Electron-hole superfluidity in coupled MoSe2-WSe2 monolayers is investigated using a mean-field multiband model…

Recently, a covalent-like quasi-bonding was unveiled for the inter-chain interaction in a promising semiconductor, few-layer Tellurium. Such quasi-bond offers comparable bond lengths and strengths with those of a typical Te-Te covalent…

材料科学 · 物理学 2019-03-19 Cong Wang , Jingsi Qiao , Yuhao Pan , Linwei Zhou , Xianghua Kong , Zhihai Cheng , Yang Chai , Wei Ji

2D Ferroelectric materials are promising for designing low-dimensional memory devices. Here, we explore strain tunable ferroelectric properties of group-IV monochalcogenides MX (M=Ge, Sn; X=S, Se) and their potential application in lateral…

材料科学 · 物理学 2022-01-24 Achintya Priydarshi , Yogesh Singh Chauhan , Somnath Bhowmick , Amit Agarwal