相关论文: High frequency guided mode resonances in mass-load…

Guiding and manipulating GHz frequency acoustic waves in $\mu$m-scale waveguides and resonators opens up new degrees of freedom to manipulate radio frequency (RF) signals in chip-scale platforms. A critical requirement for enabling…

Achieving monolithic integration of passive acoustic wave devices, in particular RF filters, with active devices such as RF amplifiers and switches, is the optimal solution to meet the challenging communication requirements of mobile…

Thin-film gallium nitride (GaN) as a proven piezoelectric material is a promising platform for the phononic integrated circuits, which hold great potential for scalable information processing processors. Here, an unsuspended traveling…

This work reports on the modeling, fabrication, and experimental characterization of a 13 GHz 30% Scandium-doped Aluminum Nitride (ScAlN) Overmoded Bulk Acoustic Resonator (OBAR) for high-frequency Radio Frequency (RF) applications, notably…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at millimeter wave (mmWave) with high quality factor (Q) using platinum (Pt) electrodes. FBARs with combinations of Pt and aluminum…

The quantum excitations of macroscopic surface acoustic waves (SAWs) have been tailored to control, communicate and transduce stationary and flying quantum states. However, the limited lifetime of this hybrid quantum systems remains…

Surface Acoustic Wave (SAW) devices featuring Aluminum Scandium Nitride (AlScN) on a 4H-Silicon Carbide (SiC) substrate, offer a unique blend of high sound velocity, low thermal resistance, substantial piezoelectric response, simplified…

Gallium nitride (GaN) as a wide-band gap material has been widely used in solid-state lighting. Thanks to its high nonlinearity and high refractive index contrast, GaN-on-insulator (GaNOI) is also a promising platform for nonlinear optical…

In this work, an Aluminum Scandium Nitride (AlScN) on Diamond Sezawa-mode surface acoustic wave (SAW) platform for RF filtering at Ku-band (12-18 GHz) is demonstrated. Thanks to the high acoustic velocity and low-loss diamond substrate, the…

This work describes sputtered scandium aluminum nitride (ScAlN) thin-film bulk acoustic resonators (FBAR) at 12.5 GHz with high electromechanical coupling (k2) of 9.5% and quality factor (Q) of 208, resulting in a figure of merit (FoM, Qk2)…

Monolithic integration of multiband (1.4~ 6.0 GHz) RF acoustic devices were successfully demonstrated within the same process flow by using the lithium niobate (LN) thin film on silicon carbide (LNOSiC) substrate. A novel surface mode with…

Bulk Acoustic Wave (BAW) filters find applications in radio frequency (RF) communication systems for Wi-Fi, 3G, 4G, and 5G networks. In the beyond-5G (potential 6G) era, high frequency bands (>8 GHz) are expected to require resonators with…

Gallium nitride (GaN) is a typical wide-bandgap semiconductor with a critical role in a wide range of electronic applications. Ballistic thermal transport at nanoscale hotspots will greatly reduce the performance of a device when its…

We demonstrate second order optical nonlinearity in a silicon architecture through heterogeneous integration of single-crystalline gallium nitride (GaN) on silicon (100) substrates. By engineering GaN microrings for dual resonance around…

Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…

The scattering of lattice excitations (phonons) with the photoexcited charge carriers is of a major concern in optoelectronic devices. Here, the resonant Raman scattering will be utilized to study an exciton-phonon interaction in GaN…

Aluminum nitride (AlN) has been widely used in microeletromechanical resonators for its excellent electromechanical properties. Here we demonstrate the use of AlN as an optomechanical material that simultaneously offer low optical and…

This letter presents miniature millimeter wave (mmWave, above 30 GHz) acoustic resonators based on a single-layer thin-film lithium niobate (LN) platform. More specifically, we present high performance third-order antisymmetric (A3) mode…

In the last decades, Bulk-Acoustic-Wave (BAW) filters have been essential components of 1G-to-4G radios. These devices rely on the high electromechanical coupling coefficient (kt2~7%), attained by Aluminum Nitride (AlN)…

Gallium-nitride (GaN) is a promising material platform for integrated electro-optic devices due to its wide direct bandgap, pronounced nonlinearities and high optical damage threshold. Low-loss ridge waveguides in GaN layers were recently…