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A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the…

介观与纳米尺度物理 · 物理学 2023-10-03 Y. V. Pershin , J. Kim , T. Datta , M. Di Ventra

An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is…

介观与纳米尺度物理 · 物理学 2019-09-18 Y. V. Pershin , M. Di Ventra

Highly accurate and predictive models of resistive switching devices are needed to enable future memory and logic design. Widely used is the memristive modeling approach considering resistive switches as dynamical systems. Here we introduce…

新兴技术 · 计算机科学 2015-03-02 E. Linn , A. Siemon , R. Waser , S. Menzel

The memory resistor abbreviated memristor was a harmless postulate in 1971. In the decade since 2008, a device claiming to be the missing memristor is on the prowl, seeking recognition as a fundamental circuit element, sometimes wanting…

新兴技术 · 计算机科学 2018-08-21 Isaac Abraham

Electrical switching has been observed in carefully designed metal-insulator-metal devices built at small geometries. These devices are also commonly known as memristors and consist of specific materials such as transition metal oxides,…

材料科学 · 物理学 2013-06-10 Gaurav Gandhi , Varun Aggarwal

The memristor, the recently discovered fundamental circuit element, is of great interest for neuromorphic computing, nonlinear electronics and computer memory. It is usually modelled either using Chua's equations, which lack material device…

材料科学 · 物理学 2014-04-23 Ella Gale

We propose a simple model of a nanoswitch as a memory resistor. The resistance of the nanoswitch is determined by electron tunneling through a nanoparticle diffusing around one or more potential minima located between the electrodes in the…

介观与纳米尺度物理 · 物理学 2013-04-17 Sergey E. Savel'ev , Fabio Marchesoni , Alexander M. Bratkovsky

Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional…

量子物理 · 物理学 2017-02-17 J. Salmilehto , F. Deppe , M. Di Ventra , M. Sanz , E. Solano

Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and…

We discuss the physical properties of realistic memristive, memcapacitive and meminductive systems. In particular, by employing the well-known theory of response functions and microscopic derivations, we show that resistors, capacitors and…

介观与纳米尺度物理 · 物理学 2013-07-04 M. Di Ventra , Y. V. Pershin

We present both an overview and a perspective of recent experimental advances and proposed new approaches to performing computation using memristors. A memristor is a 2-terminal passive component with a dynamic resistance depending on an…

新兴技术 · 计算机科学 2022-09-13 Francesco Caravelli , Juan Pablo Carbajal

The key feature of a memristor is that the resistance is a function of its previous resistance, thereby the behaviour of the device is influenced by changing the way in which potential is applied across it. Ultimately, information can be…

Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…

最优化与控制 · 数学 2024-09-24 Marieke Heidema , Henk van Waarde , Bart Besselink

The memristor is the fundamental non-linear circuit element, with uses in computing and computer memory. ReRAM (Resistive Random Access Memory) is a resistive switching memory proposed as a non-volatile memory. In this review we shall…

材料科学 · 物理学 2016-11-15 Ella Gale

We define a mechanical analog to the electrical basic circuit element M = d{\phi}/dQ, namely the ideal mechanical memristance M = dp/dx; p is momentum. We then introduce a mechanical memory resistor which has M(x) independent of velocity v,…

综合物理 · 物理学 2015-08-18 Sascha Vongehr

Nanoscale resistive switching devices (memristive devices or memristors) have been studied for a number of applications ranging from non-volatile memory, logic to neuromorphic systems. However a major challenge is to address the potentially…

其他凝聚态物理 · 物理学 2013-07-04 Siddharth Gaba , Patrick Sheridan , Jiantao Zhou , Shinhyun Choi , Wei Lu

Resistance switching memory cells such as electrochemical metallization cells and valence change mechanism cells have the potential to revolutionize information processing and storage. However, the creation of deterministic resistance…

介观与纳米尺度物理 · 物理学 2023-10-03 V. A. Slipko , Y. V. Pershin

In 2008, it was widely announced that the missing memristor, a basic two-terminal electrical circuit element, had finally been discovered. The memristor is the fourth and last such circuit element and thus completes circuit theory.…

综合物理 · 物理学 2012-08-08 Sascha Vongehr

There are three theoretical models which purport to relate experimentally-measurable or fabrication-controllable device properties to the memristor's operation: 1. Strukov et al's phenomenological model; 2. Georgiou et al's Bernoulli…

材料科学 · 物理学 2013-12-17 Ella M. Gale , Benjamin de Lacy Costello , Andrew Adamatzky

Memristors are non-volatile nano-resistors. Their resistance can be tuned by applied currents or voltages and set to a large number of levels between two limit values. Thanks to these properties, memristors are ideal building blocks for a…

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