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相关论文: Epitaxial Growth of 2D Layered Transition Metal Di…

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To advance fundamental understanding, and ultimate application, of transition-metal dichalcogenide (TMD) monolayers, it is essential to develop capabilities for the synthesis of high-quality single-layer samples. Molecular beam epitaxy…

材料科学 · 物理学 2020-01-22 Akhil Rajan , Kaycee Underwood , Federico Mazzola , Philip D. C. King

Molecular-beam epitaxy (MBE) provides a simple but powerful way to synthesize large-area high-quality thin films and heterostructures of a wide variety of materials including accomplished group III-V and II-VI semiconductors as well as…

材料科学 · 物理学 2017-09-12 Masaki Nakano , Yue Wang , Yuta Kashiwabara , Hideki Matsuoka , Yoshihiro Iwasa

Growth of two-dimensional van der Waals layered single-crystal (SC) films is highly desired to manifest intrinsic material sciences and unprecedented devices for industrial applications. While wafer-scale SC hexagonal boron nitride film has…

Transition metal dichalcogenides (TMDs) are materials that can exhibit intriguing optical properties like a change of the bandgap from indirect to direct when being thinned down to a monolayer. Well-resolved narrow excitonic resonances can…

Two-dimensional (2D) transition metal dichalcogenides (TMDCs) have attracted great attention due to their physical and chemical properties that make them promising in electronics and optoelectronics. Because of the difficulties in…

应用物理 · 物理学 2020-07-20 Lei Tang , Tao Li , Yuting Luo , Simin Feng , Zhengyang Cai , Hang Zhang , Bilu Liu , Hui-Ming Cheng

While new species and properties of two-dimensional (2D) materials are being reported with extraordinary regularity, a significant bottleneck in the field is the ability to controllably process material into working devices. We report a…

Transition metal dichalcogenides (TMDs) are van der Waals layered materials with sizable and tunable bandgaps, offering promising platforms for two-dimensional electronics and optoelectronics. To this end, the bottleneck is how to acquire…

材料科学 · 物理学 2020-10-13 Hao Li , Junku Liu , Nan Guo , Lin Xiao , Haoxiong Zhang , Shuyun Zhou , Yang Wu , Shoushan Fan

The application of new materials in nanotechnology opens new perspectives and enables ground-breaking innovations. Two-dimensional van der Waals materials and more specific, 2D chalcogenides are a promising class of new materials awaiting…

材料科学 · 物理学 2020-10-12 Wouter Mortelmans , Stefan De Gendt , Marc Heyns , Clement Merckling

Direct growth of large-area vertically stacked two-dimensional (2D) van der Waal (vdW) materials is a prerequisite for their high-end applications in integrated electronics, optoelectronics and photovoltaics. Currently, centimetre- to even…

Two-dimensional (2D) materials have received a lot of interest over the past decade. Especially van der Waals (vdW) 2D materials, such as transition metal dichalcogenides (TMDCs), and their heterostructures exhibit semiconducting properties…

Van der Waals materials enable the construction of atomically sharp interfaces between compounds with distinct crystal and electronic properties. This is dramatically exploited in moir\'e systems, where a lattice mismatch or twist between…

Conventional vapor deposition or epitaxial growth of two-dimensional (2D) materials and heterostructures is conducted in a large chamber in which masses transport from the source to the substrate. Here we report a chamber-free, on-chip…

The growth of wafer-scale van der Waals (vdW) thin films and heterostructures by molecular beam epitaxy (MBE) is important for future applications in quantum technologies, next generation optoelectronic devices, and fundamental physics…

材料科学 · 物理学 2025-08-13 Qihua Zhang , Maria Hilse , Stephanie Law

We report epitaxial growth of vanadium diselenide (VSe$_2$) thin films in the octahedrally-coordinated (1T) structure on GaAs(111)B substrates by molecular beam epitaxy. Film thickness from a single monolayer (ML) up to 30 ML is…

Two-dimensional (2D) transition metal dichalcogenide (TMD) nanosheets exhibit remarkable electronic and optical properties. The 2D features, sizable bandgaps, and recent advances in the synthesis, characterization, and device fabrication of…

材料科学 · 物理学 2015-02-04 Xin Zhang , Xiao-Fen Qiao , Wei Shi , Jiang-Bin Wu , De-Sheng Jiang , Ping-Heng Tan

The growth and exfoliation of two-dimensional (2D) materials have led to the creation of edges and novel interfacial states at the juncture between crystals with different composition or phases. These hybrid heterostructures (HSs) can be…

介观与纳米尺度物理 · 物理学 2019-04-02 Oscar Ávalos-Ovando , Diego Mastrogiuseppe , Sergio E. Ulloa

We review recent experimental progresses on layered topological materials, mainly focusing on transitional metal dichalcogenides with various lattice types including 1T, Td and 1T' structural phases. Their electronic quantum states are…

介观与纳米尺度物理 · 物理学 2019-03-25 Junchao Ma , Ke Deng , Lu Zheng , Sanfeng Wu , Zheng Liu , Shuyun Zhou , Dong Sun

Integration of two-dimensional (2D) van der Waals (vdWs) materials with non-2D materials to realize mixed-dimensional heterostructures has potential for creating functional devices beyond the reach of existing materials and has long been a…

材料科学 · 物理学 2022-12-06 Ya-Ning Ren , Mo-Han Zhang , Qi Zheng , Lin He

Epitaxial growth of WTe$_2$ offers significant advantages, including the production of high-qualityfilms, possible long range in-plane ordering and precise control over layer thicknesses. However,the mean island size of WTe$_2$ grown by…

Van der Waals heterostructures have promised the realisation of artificial materials with multiple physical phenomena such as giant optical nonlinearities, spin-to-charge interconversion in spintronics and topological carrier protection, in…

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