相关论文: Electric selective activation of memristive interf…
We analyzed micrometer-scale titanium-niobium-oxide prototype memristors, which exhibited low write-power (<3 {\mu}W) and energy (<200 fJ/bit/{\mu}m2), low read-power (~nW), and high endurance (>millions of cycles). To understand their…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Voltage-driven memristive switching has been reported in molecular junctions, yet its microscopic origin often remains elusive. Here, we study three rigid OPE-like derivatives that lack an obvious internal switching pathway using…
Single-molecule magnets weakly coupled to two ferromagnetic leads act as memory devices in electronic circuits---their response depends on history, not just on the instantaneous applied voltage. We show that magnetic anisotropy introduces a…
Two-dimensional layered semiconductors have recently emerged as attractive building blocks for next-generation low-power non-volatile memories. However, challenges remain in the controllable sub-micron fabrication of bipolar resistively…
Using isothermal and temperature-dependent electrical measurements, we investigated the resistive switching mechanism of amorphous titanium oxide thin films deposited by a plasma-enhanced atomic layer deposition method between two aluminum…
Memristive switching serves as the basis for a new generation of electronic devices. Memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies, which is difficult to…
Here we demonstrate that both, tunnel magneto resistance (TMR) and resistive switching (RS), can be observed simultaneously in nano-scale magnetic tunnel junctions. The devices show bipolar RS of 6 % and TMR ratios of about 100 %. For each…
Current quantum systems based on spin qubits are controlled by classical electronics located outside the cryostat at room temperature. This approach creates a major wiring bottleneck, which is one of the main roadblocks toward truly…
Resistive switching is the fundamental process that triggers the sudden change of the electrical properties in solid-state devices under the action of intense electric fields. Despite its relevance for information processing, ultrafast…
In metal/oxide heterostructures, rich chemical, electronic, magnetic and mechanical properties can emerge from interfacial chemistry and structure. The possibility to dynamically control interface characteristics with an electric field…
We report a memristive switching effect in the Pt/CuOx/Si/Pt devices prepared by rf sputtering technique at room temperature. Different from other Cu-based switching systems, the devices show a non-filamentary switching effect. A gradual…
Thermoelectric devices at the nanoscale offer promising routes for on-chip refrigeration and waste-heat recovery, yet most semiconductor-based implementations suffer from limited tunability and narrow operational ranges. We introduce a…
Memristors are nonlinear two-terminal circuit elements whose resistance at a given time depends on past electrical stimuli. Recently, networks of memristors have received attention in neuromorphic computing since they can be used as a tool…
Nanometallic devices based on amorphous insulator-metal thin films are developed to provide a novel non-volatile resistance-switching random-access memory (RRAM). In these devices, data recording is controlled by a bipolar voltage, which…
Memristive devices represent a promising technology for building neuromorphic electronic systems. In addition to their compactness and non-volatility features, they are characterized by computationally relevant physical properties, such as…
Memristors are emerging as key electronic components that retain resistance states without power. Their non-volatile nature and ability to mimic synaptic behavior make them ideal for next-generation memory technologies and neuromorphic…
In this study, we design a reservoir computing (RC) network by exploiting short- and long-term memory dynamics in Au/Ti/MoS$_2$/Au memristive devices. The temporal dynamics is engineered by controlling the thickness of the Chemical Vapor…
Oxide heterostructures represent a unique playground for triggering the emergence of novel electronic states and for implementing new device concepts. The discovery of 2D conductivity at the $LaAlO_3/SrTiO_3$ interface has been linking for…
The ability of mechanical systems to perform basic computations has gained traction over recent years, providing an unconventional alternative to digital computing in off grid, low power, and severe environments which render the majority of…