相关论文: Switch Elements with S-Shaped Current-Voltage Char…
We present a multiscale simulation framework to compute the current vs. voltage (I-V ) characteristics of metal/oxide/metal structures building the core of conductive bridging random access memory (CBRAM) cells and to shed light on their…
Crossbar array architecture is an essential design element for densely connected Non-Volatile Memory(NVM) applications. To overcome intrinsic sneak current problem of crossbar arrays, each memory unit is serially attached to a selector unit…
Neural processing systems typically represent data using leaky integrate and fire (LIF) neuron models that generate spikes or pulse trains at a rate proportional to their input amplitudes. This mechanism requires high firing rates when…
Constructing electronic models of neurons has several applications including reproducing dynamics of biological neurons and their networks and neuroprosthetics. In the brain, most neurons themselves are in a non-oscillatory mode, and brain…
We introduce a methodology to implement the physiological transition {between distinct neuronal spiking modes} in electronic circuits composed of resistors, capacitors and transistors. The result is a simple neuromorphic device organized by…
We present a comprehensive phenomenological model for the crossbar integrated metal-oxide continuous-state memristors. The model consists of static and dynamic equations, which are obtained by fitting a large amount of experimental data,…
The low-temperature electronic and magnetic properties of NH$_4$V$_2$O$_5$, an isoelectronic analog of the spin-ladder compound $\alpha'$-NaV$_2$O$_5$, are investigated using DFT+$U$ calculations. Two charge-ordering patterns - zigzag and…
Negative differential resistance (NDR) behavior observed in several transition metal oxides is crucial for developing next-generation memory devices and neuromorphic computing systems. NbO2-based memristors exhibit two regions of NDR at…
We design and study splitting integrators for the temporal discretization of the stochastic FitzHugh--Nagumo system. This system is a model for signal propagation in nerve cells where the voltage variable is solution of a one-dimensional…
Nanomagnets driven by spin currents provide a natural implementation for a neuron and a synapse: currents allow convenient summation of multiple inputs, while the magnet provides the threshold function. The objective of this paper is to…
We have synthesized Ga-doped Cr2O3 system with compositions Cr1.45Ga0.55O3 and Cr1.17Ga0.83O3 by chemical co-precipitation route and post annealing at 800^C. The samples have been stabilized in rhombohedral crystal structure with space…
Variability in memristive devices based on h-BN dielectrics is studied in depth. Different numerical techniques to extract the reset voltage are described and the corresponding cycle-to-cycle variability is characterized by means of the…
Neuromorphic computing, inspired by the brain's parallel and energy-efficient processing, offers a transformative approach to artificial intelligence. In this study, we fabricated optimized spin-transfer torque nano-oscillators (STNOs) and…
Electrically driven insulator-metal transitions in prototypical quantum materials such as VO2 offer a foundational platform for designing novel solid-state devices. Tuning the V: O stoichiometry offers a vast electronic phase space with…
To optimize the design of STT-MRAM (spin-transfer torque magnetic random access memory), it is necessary to be able to predict switching (error) rates. For small elements, this can be done using a single-macrospin theory since the element…
The current-voltage (I-V) conversion characterizes the physiology of cellular microdomains and reflects cellular communication, excitability, and electrical transduction. Yet deriving such I-V laws remains a major challenge in most cellular…
We analyze non-equilibrium states in a tunnel superconductor-normal metal (NSN) structure in the presence of a tunnel current $I$. We use an approximation of an effective temperature $T$ and calculate the current-voltage I-V…
We present a computationally inexpensive yet accurate phenomenological model of memristive behavior in titanium dioxide devices by fitting experimental data. By design, the model predicts most accurately I-V relation at small non-disturbing…
New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative…
We present a general formalism for the construction of thermodynamically consistent stochastic models of non-linear electronic circuits. The devices constituting the circuit can have arbitrary I-V curves and may include tunnel junctions,…