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Many central neurons, and in particular certain brainstem aminergic neurons exhibit spontaneous and fairly regular spiking with frequencies of order a few Hz. A large number of ion channel types contribute to such spiking so that accurate…

神经元与认知 · 定量生物学 2015-08-25 Henry C. Tuckwell , Ying Zhou , Nicholas J. Penington

Enhancing power efficiency and performance in neuromorphic computing systems is critical for next-generation artificial intelligence applications. We propose the Nanoscale Side-contacted Field Effect Diode (S-FED), a novel solution that…

硬件体系结构 · 计算机科学 2024-12-18 Seyedmohamadjavad Motaman , Sarah Sharif , Yaser Banad

A minimalistic model of the half-center oscillator is proposed. Within it, we consider dynamics of two excitable neurons interacting by means of the excitatory coupling. In the parameter space of the model, we identify the regions of…

动力系统 · 数学 2021-03-02 A. G. Korotkov , T. A. Levanova , M. A. Zaks , G. V. Osipov

Memristive devices are commonly benchmarked by the multi-level programmability of their resistance states. Neural networks utilizing memristor crossbar arrays as synaptic layers largely rely on this feature. However, the dynamical…

To establish credibility for the use of the Slater determinant harmonic oscillator (SDHO) density in predicting root-mean-square proton and neutron radii for Be, B, C, N, O, and F isotopes [M. Imran et al., {\color{blue}Phys. Rev. C {\bf…

核理论 · 物理学 2025-06-04 Z. Hasan , M. Imran , A. A. Usmani , Z. A. Khan

The interplay between charge ordering and its manifestation in macroscopic electrical transport in low-dimensional materials is crucial for understanding resistive switching mechanisms. In this study, we investigate the electronic transport…

强关联电子 · 物理学 2025-11-11 Nitin Kumar , Nicholas Jerla , John Ponis , Sarbajit Banerjee , G. Sambandamurthy

Volatile memristors have recently gained popularity as promising devices for neuromorphic circuits, capable of mimicking the leaky function of neurons and offering advantages over capacitor-based circuits in terms of power dissipation and…

硬件体系结构 · 计算机科学 2025-07-22 Tanay Patni , Rishona Daniels , Shahar Kvatinsky

In recent years, several experimental groups have reported measurements of the current-voltage (I-V) characteristics of individual or small numbers of molecules. Our purpose in this chapter is to provide an intuitive explanation for the…

介观与纳米尺度物理 · 物理学 2007-05-23 Magnus Paulsson , Ferdows Zahid , Supriyo Datta

We identify experimental signatures in the current-voltage (I-V) characteristics of weakly contacted molecules directly arising from excitations in their many electron spectrum. The current is calculated using a multielectron master…

介观与纳米尺度物理 · 物理学 2009-11-11 B. Muralidharan , A. W. Ghosh , S. Datta

Spiking Neural Networks (SNNs) are gaining widespread momentum in the field of neuromorphic computing. These network systems integrated with neurons and synapses provide computational efficiency by mimicking the human brain. It is desired…

新兴技术 · 计算机科学 2021-10-27 Omkar Phadke , Jayatika Sakhuja , Vivek Saraswat , Udayan Ganguly

Neuromorphic engineering makes use of mixed-signal analog and digital circuits to directly emulate the computational principles of biological brains. Such electronic systems offer a high degree of adaptability, robustness, and energy…

系统与控制 · 电气工程与系统科学 2026-04-09 Loris Mendolia , Chenxi Wen , Elisabetta Chicca , Giacomo Indiveri , Rodolphe Sepulchre , Jean-Michel Redouté , Alessio Franci

We present a neuronal network model inspired by the Ising model, where each neuron is a binary spin ($s_i = \pm1$) interacting with its neighbors on a 2D lattice. Updates are asynchronous and follow Metropolis dynamics, with a…

神经元与认知 · 定量生物学 2025-06-10 Sajedeh Sarmastani , Maliheh Ghodrat , Yousef Jamali

We model electrical conductivity in metastable amorphous $Ge_{2}Sb_{2}Te_{5}$ using independent contributions from temperature and electric field to simulate phase change memory devices and Ovonic threshold switches. 3D, 2D-rotational, and…

应用物理 · 物理学 2021-02-03 Jake Scoggin , Helena Silva , Ali Gokirmak

The paper presents the results of a study of electron-beam modification (EBM) of VO2-switch I-V curve threshold parameters and the self-oscillation frequency of a circuit containing such a switching device. EBM in vacuum is reversible and…

We extend the notion of memristive systems to capacitive and inductive elements, namely capacitors and inductors whose properties depend on the state and history of the system. All these elements show pinched hysteretic loops in the two…

介观与纳米尺度物理 · 物理学 2009-11-21 Massimiliano Di Ventra , Yuriy V. Pershin , Leon O. Chua

In Valence Change Memory (VCM) cells, the conductance of an insulating switching layer is reversibly modulated by creating and redistributing point defects under an external field. Accurate simulations of the switching dynamics of these…

无序系统与神经网络 · 物理学 2023-01-02 Manasa Kaniselvan , Mathieu Luisier , Marko Mladenović

With remarkable electrical and optical switching properties induced at low power and near room temperature (68C), vanadium dioxide (VO2) has sparked rising interest in unconventional computing among the phase-change materials research…

In many modern AI chips and multicore systems-on-chip, embedded applications exhibit predictable inter-core traffic behavior that can be characterized at design time. For such applications, a variety of design-time traffic management and…

硬件体系结构 · 计算机科学 2026-05-07 Meysam Zaeemi , Mehdi Modarressi

This paper describes a robust, modular, and physics- based circuit framework to model conventional and emerging Magnetic Tunnel Junction (MTJ) devices. Magnetization dynamics are described by the stochastic Landau-Lifshitz-Gilbert (sLLG)…

介观与纳米尺度物理 · 物理学 2018-08-23 Mustafa Mert Torunbalci , Pramey Upadhyaya , Sunil A. Bhave , Kerem Y. Camsari

We study a novel S=1/2 cluster chain Hamiltonian which has recently been proposed in the context of the charge ordered low-temperature phase of alpha'-NaV2O5. We perform a detailed investigation of this model within a large range of…

强关联电子 · 物理学 2009-10-31 Andreas Honecker , Wolfram Brenig