相关论文: Velocity Saturation in La-doped BaSnO3 Thin Films
Current-voltage dependence is measured in (Ga,Sb)-doped ZnO up to 150 kV/cm electric fields. A channel temperature is controlled by applying relatively short (few ns) voltage pulses to two-terminal samples. The dependence of electron drift…
Owing high conductivity in microcrystalline thin-films, CsSnI3 perovskite is a promising semiconductor for thermoelectrics and optoelectronics. Rapid oxidation of thin-film and intrinsic lattice strain hinders stabilization of the device…
Wide-bandgap perovskite stannates are of interest for the emergent all-oxide transparent electronic devices due to their unparalleled room temperature electron mobility. Considering the advantage of amorphous material in integrating with…
LaAlO3-Ba0.5Sr0.5TiO3 (LAO-BST) thin films, with different LAO contents, were deposited on Pt/Ti/SiO2/Si and (100) LaAlO3 substrate, via a pulsed laser deposition (PLD). Phase composition and microstructure of the LAO-BST thin films were…
Oxide interfaces provide an opportunity for electronics. However, patterning of electron gases at complex oxide interfaces is challenging. In particular, patterning of complex oxides while preserving a high electron mobility remains…
Surface Acoustic Waves on piezoelectric substrates can be used to investigate the dynamic conductivity of thin films in a non-contact and very sensitive way, especially at low conductivities. Here, we report on such surface acoustic wave…
Micro-electro-mechanical resonators employing a magnetic element have been proposed for magnetic field sensing applications, but the integration of magnetic materials with standard semiconductor compounds is challenging and requires complex…
Wide bandgap (~3.1 eV) La-doped BaSnO3 (LBSO) has attracted increasing attention as one of the transparent oxide semiconductors since its bulk single crystal shows a high carrier mobility (~320 cm2 V-1 s-1) with a high carrier concentration…
Although there are so many reports on the carrier effective mass (m*) of a transparent oxide semiconductor BaSnO3, it is almost impossible to know the intrinsic m* value because the reported m* values are scattered from 0.06 to 3.7 m0. Here…
This work proposes a double-layer thin-film lithium niobate (LiNbO3) longitudinally excited shear wave resonator with a theoretical electromechanical coupling coefficient exceeding 60%, RaR close to 28%, and no spurious modes. This…
By laser ablation we prepared thin films of the colossal magnetoresistive compound La_(1-x)Ca_xMnO_3 with doping levels 0.1<x<0.9 on MgO substrates. X-ray diffraction revealed epitaxial growth and a systematic decrease of the lattice…
Oxide two-dimensional electron gases (2DEGs) promise high charge carrier concentrations and low-loss electronic transport in semiconductors such as BaSnO$_{3}$ (BSO). ACBN0 computations for BSO/SrNbO$_{3}$ (SNO) interfaces show…
Recently, perovskite related BaPbO$_3$ has attracted attention due to its hidden topological properties and, moreover, has been used as a thin layer in heterostructures to induce two-dimensional superconductivity. Here we investigate the…
Transient reflectivity (TR) measured at laser photon energy 1.51 eV from the indirectly intersurface coupled topological insulator Bi2-xMnxSe3 films (12 nm thick) revealed a strong dependence of the rise-time and initial decay-time…
Nanocomposite metal oxide thin films exhibit assuring qualities in the field of gas sensors because of the collective opportunities provided by the heterointerface formation. In this work, we present the synthesis of nitrogen doped…
Perovskite SrIrO3 (SIO) films epitaxially deposited with a thickness of about 60 nm on various substrate materials display nearly strain-relieved state. Films grown on orthorhombic (110) DyScO3 (DSO) are found to display untwinned bulk-like…
LiNbO3 films doped with vanadium (V) were deposited using RF magnetron sputtering technique. To realize doping with a wider range of V concentration, a 30 mm V metal inlaid target asymmetrically embedded in the 150 mm lithium niobate target…
Perovskite-based optoelectronic devices have shown great promise for solar conversion and other optoelectronic applications, but their long-term performance instability is regarded as a major obstacle to their widespread deployment.…
A wealth of intriguing properties emerge in the seemingly simple system composed of the band insulators LaAlO3 and SrTiO3 such as a two-dimensional electron gas, superconductivity and magnetism. In this paper we review the current insight…
The correlated oxide SmNiO3 (SNO) exhibits an insulator to metal transition (MIT) at 130 {\deg}C in bulk form. We report on synthesis and electron transport in SNO films deposited on LaAlO3 (LAO) and Si single crystals. X-ray diffraction…