相关论文: Confined step-flow growth of Cu intercalated betwe…
Understanding the influence that copper substrate surface symmetry and oxygen impurities have on the growth of graphene by chemical vapor deposition is important for developing techniques for producing high quality graphene. Therefore, we…
Single crystal metal films on insulating substrates are attractive for microelectronics and other applications, but they are difficult to achieve on macroscopic length scales. The conventional approach to obtaining such films is epitaxial…
The fundamental properties of graphene are making it an attractive material for a wide variety of applications. Various techniques have been developed to produce graphene and recently we discovered the synthesis of large area graphene by…
A foundation of the modern technology that uses single-crystal silicon has been the growth of high-quality single-crystal Si ingots with diameters up to 12 inches or larger. For many applications of graphene, large-area high-quality…
We report the synthesis of single and bi layer graphene films by low pressure chemical vapor deposition technique on Cu and Au substrates. The as grown films were characterized by transmission electron microscopy, scanning electron…
Graphene forms from a relatively dense, tightly-bound C-adatom gas, when elemental C is deposited on or segregates to the Ru(0001) surface. Nonlinearity of the graphene growth rate with C adatom density suggests that growth proceeds by…
The current method of growing large-area graphene on Cu surfaces (polycrystalline foils and thin films) and its transfer to arbitrary substrates is technologically attractive. However, the quality of graphene can be improved significantly…
We demonstrate a method for synthesizing large scale single layer graphene by thermal annealing of ruthenium single crystal containing carbon. Low energy electron diffraction indicates the graphene grows to as large as millimeter dimensions…
Low-energy electron microscopy (LEEM) reveals a new mode of graphene growth on Ru(0001) in which Ru atoms are etched from a step edge and injected under a growing graphene sheet. Based on density functional calculations, we propose a model…
We use low-energy electron microscopy to investigate how graphene grows on Cu(111). Graphene islands first nucleate at substrate defects such as step bunches and impurities. A considerable fraction of these islands can be rotationally…
We study the formation of epitaxial graphene on Ru(0001) using fast x-ray photoelectron spectroscopy during the growth process. The assignment of different C 1s and Ru 3d core level components and their evolution during the growth process…
The growth of graphene by catalytic decomposition of ethylene on Cu(111) in an ultra-high vacuum system was investigated with low energy electron diffraction, low energy electron microscopy, and atomic force microscopy. Attempts to form a…
We study the growth and microscopic structure of large-area graphene monolayers, grown on copper single crystals by chemical vapor deposition (CVD) in ultra-high vacuum (UHV). Using atomic-resolution scanning tunneling microscopy (STM), we…
Large-area graphene is a new material with properties that make it desirable for advanced scaled electronic devices1. Recently, chemical vapor deposition (CVD) of graphene and few-layer graphene using hydrocarbons on metal substrates such…
We present a comprehensive study of graphene grown by chemical vapor deposition on copper single crystals with exposed (100), (110) and (111) faces. Direct examination of the as-grown graphene by Raman spectroscopy using a range of visible…
We measure the concentration of carbon adatoms on the Ru(0001) surface that are in equilibrium with C atoms in the crystal's bulk by monitoring the electron reflectivity of the surface while imaging. During cooling from high temperature, C…
We develop a strategy for graphene growth on Ru(0001) followed by silicon-layer intercalation that not only weakens the interaction of graphene with the metal substrate but also retains its superlative properties. This G/Si/Ru architecture,…
We report the growth, structural and magnetic properties of the less studied Eu-oxide phase, Eu$_3$O$_4$, thin films grown on a Si/SiO$_2$ substrate and Si/SiO$_2$/graphene using molecular beam epitaxy. The X-ray diffraction scans show that…
Films of (111)-textured Cu, Ni, and Cu$_x$Ni$_y$ were evaluated as substrates for chemical vapor deposition of graphene. A metal thickness of 400 nm to 700 nm was sputtered onto a substrate of $\alpha-$Al$_2$O$_3$(0001) at temperatures of…
Li metal has been deposited on the surface of a Ru(0001) single crystal containing patches of monolayer-thick epitaxial graphene islands. The use of low-energy electron microscopy and diffraction allowed us to {\em in situ} monitor the…