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Topological insulators (TIs) are a new quantum state of matter which have gapless surface states inside the bulk energy gap. Starting with the discovery of two dimensional TIs, the HgTe-based quantum wells, many new topological materials…

材料科学 · 物理学 2012-12-03 Lukas Müchler , Frederick Casper , Binghai Yan , Stanislav Chadov , Claudia Felser

We realize an elastic second-order topological insulator hosting both one-dimensional gapped edge states and zero-dimensional in-gap corner modes in the double-sided pillared phononic crystal plates with square lattice. Changing the width…

经典物理 · 物理学 2019-09-04 Shao-yong Huo , Hong-bo Huang , Lu-yang Feng , Jiu-jiu Chen

A 3D fermionic topological insulator has a gapless Dirac surface state protected by time-reversal symmetry and charge conservation symmetry. The surface state can be gapped by introducing ferromagnetism to break time-reversal symmetry,…

强关联电子 · 物理学 2013-09-24 Parsa Bonderson , Chetan Nayak , Xiao-Liang Qi

Controlling the flow of spin and charge currents in topological insulators (TIs) is a crucial requirement for applications in quantum computation and spin electronics. We demonstrate that such control can be established in nanoscopic…

介观与纳米尺度物理 · 物理学 2016-03-23 John S. Van Dyke , Dirk K. Morr

Dual topological insulators (DTIs) are simultaneously protected by time-reversal and crystal symmetries, representing advantageous alternatives to conventional topological insulators. By combining ab initio calculations and the…

介观与纳米尺度物理 · 物理学 2025-02-24 Warlley H. Campos , Poliana H. Penteado , Julian Zanon , Paulo E. Faria Junior , Denis R. Candido , J. Carlos Egues

Topological band insulators which are dynamically generated by electron-electron interactions have been the- oretically proposed in two and three dimensional lattice models. We present evidence that the two-dimensional version can be…

强关联电子 · 物理学 2011-11-15 Andreas Rüegg , Gregory A. Fiete

Introducing, observing, and manipulating individual impurities coupled to a host material offers the opportunity to create new device concepts based on single spin and charge states. Because of potential applications in spintronics and…

介观与纳米尺度物理 · 物理学 2016-09-29 Paolo Sessi , Thomas Bathon , Konstantin A. Kokh , Oleg E. Tereshchenko , Matthias Bode

We propose a two-dimensional non-Hermitian Chern insulator with inversion symmetry, which is anisotropic and has staggered gain and loss in both x and y directions. In this system, conventional bulk-boundary correspondence holds. The Chern…

介观与纳米尺度物理 · 物理学 2019-10-11 H. C. Wu , L. Jin , Z. Song

Nontrivial band topology along with magnetism leads to different novel quantum phases. When time-reversal-symmetry is broken in three-dimensional topological insulators (TIs) by applying high enough magnetic field or proximity effect,…

介观与纳米尺度物理 · 物理学 2023-09-11 Nezhat Pournaghavi , Banasree Sadhukhan , Anna Delin

Topological materials are of great interest because they can support metallic edge or surface states that are robust against perturbations, with the potential for technological applications. Here we experimentally explore the light-induced…

Strong nonmagnetic impurities on the surface of three-dimensional topological insulators (TIs) generate localized resonance peaks close to the Dirac point. We show that this results in a strongly reduced critical Coulomb interaction…

介观与纳米尺度物理 · 物理学 2015-02-03 Annica M. Black-Schaffer , Dmitry Yudin

The theory of magnetoresistance of the edge state of a two-dimensional topological insulator is developed. The magnetic field violates the time-reversal invariance. Magnetoresistance arises due to the energy gap opened by a magnetic field…

介观与纳米尺度物理 · 物理学 2021-01-07 Leonid Braginsky , M. V. Entin

Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counter-propagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. This…

介观与纳米尺度物理 · 物理学 2021-05-04 A. I. Figueroa , T. Hesjedal , N. -J. Steinke

Topological insulators are characterized by the presence of gapless surface modes protected by time-reversal symmetry. In three space dimensions the magnetoelectric response is described in terms of a bulk theta term for the electromagnetic…

强关联电子 · 物理学 2013-05-29 Brian Swingle , Maissam Barkeshli , John McGreevy , T. Senthil

Topological insulators (TIs) are characterized by an insulating bulk and symmetry protected bound state on their boundaries. A "strong" topological insulator is characterized by robust conducting states on \emph{all} boundaries protected by…

介观与纳米尺度物理 · 物理学 2020-12-16 Inbar Hotzen Grinberg , Mao Lin , Wladimir A. Benalcazar , Taylor L. Hughes , Gaurav Bahl

Josephson weak links made of two-dimensional topological insulators (TIs) exhibit magnetic oscillations of the supercurrent that are reminiscent of those in superconducting quantum interference devices (SQUIDs). We propose a microscopic…

介观与纳米尺度物理 · 物理学 2015-07-13 G. Tkachov , P. Burset , B. Trauzettel , E. M. Hankiewicz

In the seminal proposal by Fu and Kane, the superconducting proximity effect is used to realize topological superconductivity in the topological surface state (TSS) of a 3D topological insulator (TI). In a line Josephson junction made on…

Topological insulators have become one of the most active research areas in condensed matter physics. This article reviews progress on the topic of electronic correlations effects in the two-dimensional case, with a focus on systems with…

强关联电子 · 物理学 2013-03-08 M. Hohenadler , F. F. Assaad

Topological insulators are characterized by specially protected conduction on their outer boundaries. We show that the protected edge conduction exhibited by 2-D topological insulators (and also Chern insulators) is independent of…

介观与纳米尺度物理 · 物理学 2015-09-01 Quansheng Wu , Liang Du , Vincent E. Sacksteder

We consider a quantum spin Hall system in a two-terminal setup, with an extended tunneling contact connecting upper and lower edges. We analyze the effects of this geometry on the backscattering current as a function of voltage,…

介观与纳米尺度物理 · 物理学 2012-06-08 G. Dolcetto , S. Barbarino , D. Ferraro , N. Magnoli , M. Sassetti