相关论文: Engineering decomposition-resilience and de-coales…
The realization of semiconductor structures with stable excitons at room temperature is crucial for the development of excitonics and polaritonics. Quantum confinement has commonly been employed for enhancing excitonic effects in…
We present a set of experimental results identifying various effects that govern the carrier dynamics of self-catalyzed GaAs/AlGaAs core-shell nanowires (NWs) grown by molecular beam epitaxy i.e. surface recombination velocity, surface…
By placing a quantum emitter in the mouths of nanogaps consisting of two metal nanoparticles nearly into contact, significant increases in emission rate are obtained. This mechanism is central in the design of modern plasmonic nanoantennas.…
An in situ study of the epitaxial growth of SmN thin films on Ga-polar GaN (0001)templates by molecular beam epitaxy is reported. Using X-ray photoelectron spectroscopy we found that Ga segregates at the surface during the first stages of…
Piezoelectric capacitive NanoGenerators (NG) based on vertically grown crystalline zinc oxide nanowires (ZnO-NWs) have been fabricated using a low-cost and scalable hydrothermal method on gold-coated silicon substrates, which served as both…
The near field scanning optical microscopy (NSOM) is not only a tool for imaging of sub-diffraction limited objects but also a prominent characteristic tool for understanding the intrinsic properties of the nanostructures. In order to…
We investigate the effect of the p-type top contact on the optoelectronic characteristics of light emitting diodes (LEDs) based on (In,Ga)N/GaN nanowire (NW) ensembles grown by molecular beam epitaxy on Si substrates. We compare devices…
By using non-equilibrium molecular dynamics simulations, we demonstrated that thermal conductivity of Germanium nanowires can be reduced more than 25% at room temperature by atomistic coating. There is a critical coating thickness beyond…
Thermal decomposition of wurtzite (0001)-oriented GaN was analyzed: in vacuum, under active N exposure, and during growth by rf-plasma assisted molecular beam epitaxy. The GaN decomposition rate was determined by measurements of the Ga…
The impact of decorated dislocations on the effective thermal conductivity of GaN is investigated by means of equilibrium molecular dynamics simulations via the Green-Kubo approach. The formation of "nanowires" by a few atoms of In in the…
The ability to produce nanowires through vapor- and solution-based processes has propelled nanowire material systems toward a wide range of technological applications. Conventional, vapor-based nanowire syntheses have enabled precise…
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier-transportation barriers, and foreign impurities (Au) with deep-energy levels can form carrier traps and non-radiative recombination centers. Here,…
Ultimately, brittle fracture involves breaking atomic bonds. However, we still lack a clear picture of what happens in the highly deformed region around a moving crack tip. Consequently, we still cannot link nano to atomic-scale phenomena…
We investigate the structural and optical properties of spontaneously formed GaN nanowires with different degrees of coalescence. This quantity is determined by an analysis of the cross-sectional area and perimeter of the nanowires obtained…
Tuning thermal transport in semiconductor nanostructures is of great significance for thermal management in information and power electronics. With excellent transport properties, such as ballistic transport, immunity to point defects and…
III-V nanowire heterostructures can act as sources of single and entangled photons and are enabling technologies for on-chip applications in future quantum photonic devices. The unique geometry of nanowires allows to integrate…
Colloidal nanocrystals are a promising fluorescent class of materials, whose spontaneous emission features can be tuned over a broad spectral range via their composition, geometry and size. However, towards embedding nanocrystals films in…
Assembling nanostructured building blocks into network materials unlocks macroscopic properties inaccessible with monolithic solids, notably toughness and tolerance to electrochemical alloying. A method is reported for large-scale,…
We report the growth of Al-catalysed ZnO nanowires (NWs) using a thermal evaporation technique.Before the growth, the substrates were covered with a distribution of Al nano-island that act as seeds. We found that the density of NWs…
Ammonia (NH3) is commonly used as group V precursor in gallium nitride (GaN) metalorganic chemical vapor deposition (MOCVD). The high background carbon (C) impurity in MOCVD GaN is related to the low pyrolysis efficiency of NH3, which…