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AlScN thin films were grown via metalorganic chemical vapor deposition (MOCVD), showing controllable incorporation of scandium (Sc) into the AlN lattices. Systematic variation of growth parameters demonstrated an obvious influence on Sc…

Thin layers of GaMnAs ferromagnetic semiconductor grown by molecular beam epitaxy on GaAs(001) substrates were studied. To improve their magnetic properties the post-growth annealing procedures were applied, using the surface passivation…

We report epitaxial growth and characterization of GaN thin films on sapphire (0001) substrates using low temperature GaN intermediate layer by plasma assisted molecular beam epitaxy (PA-MBE) technique. As grown and annealed GaN thin films…

The effects of edge covalent functionalization on the structural, electronic and optical properties of elongated armchair graphene nanoflakes (AGNFs) are analyzed in detail for a wide range of terminations, within the ramework of…

We investigated the suitability of AlN as a buffer layer for NbN superconducting nanowire single-photon detectors (SNSPDs) on GaAs. The NbN films with a thickness of 3.3 nm to 20 nm deposited onto GaAs substrates with AlN buffer layer,…

Intrinsic catalytic process by capillary condensation of Ga-atoms into nanotrenches, formed among impinging islands during the wurzite-GaN thin film deposition, is shown to be an effective path to growing GaN nanorods without metal…

We have investigated the temperature-dependent morphology and composition changes occurring during a controlled self-assembling of thin Au film on the Gallium arsenide (001) surface utilizing electron microscopy at nano and atomic levels.…

N-polar aluminum nitride (AlN) is an important building block for next-generation high-power RF electronics. We report successful homoepitaxial growth of N-polar AlN by molecular beam epitaxy (MBE) on large-area cost-effective N-polar AlN…

Materials with negative thermal expansion (NTE), which contract upon heating, are of great interest both technically and fundamentally. Here, we report giant NTE covering room temperature in mechanically milled antiperovksite GaNxMn3…

We have investigated clean and As-covered zinc-blende GaN (001) surfaces, employing first-principles total-energy calculations. For clean GaN surfaces our results reveal a novel surface structure very different from the well-established…

The annealing-induced formation of (Mn,Ga)As nanocrystals in (Ga,Mn)As/GaAs superlattices was studied by X-ray diffraction, transmission electron microscopy and magnetometry. The superlattice structures with 50 A thick (Ga,Mn)As layers…

Accumulative Roll Bonding(ARB) process was used to develop few-layer graphene nano platelets reinforced aluminum matrix (GNPs/Al) composite in the form of sheets. Annealed Al sheets were ARB processed up to 6 pass along with coating of…

In this research, the ambient cured one part alkali activated material (AAM) containing graphene nanoplatelets (GNPs), fly ash, slag and silica fume has been investigated after high temperature exposure to 200 to 800oC. Their compressive…

Aluminum nitride (AlN) is an emerging material for integrated quantum photonics with its excellent linear and nonlinear optical properties. In particular, its second-order nonlinear susceptibility $\chi^{(2)}$ allows single-photon…

Annealing can increase the Curie temperature and net magnetization in uncapped (Ga,Mn)As films, effects that are suppressed when the films are capped with GaAs. Previous polarized neutron reflectometry (PNR) studies of uncapped (Ga,Mn)As…

500-nm-thick $\mathrm{In}_{x}\mathrm{Ga}_{1-x}\mathrm{N}$ layers with $x=$ 0.05-0.14 are grown using plasma-assisted molecular beam epitaxy, and their properties are assessed by a comprehensive analysis involving x-ray diffraction,…

Solute segregation is used to limit grain growth in nanocrystalline metals, but this stabilization often breaks down at high temperatures. Amorphous intergranular films can form in certain alloys at sufficiently high temperatures, providing…

We report valence band electronic structure evolution of graphene oxide (GO) upon its thermal reduction. Degree of oxygen functionalization was controlled by annealing temperatures, and an electronic structure evolution was monitored using…

Electronic structure properties of nanowires (NW) with diameters of 1.5 nm and 3 nm based on semimetallic $\alpha$-Sn are investigated by employing density functional theory and perturbative $GW$ methods. We explore the dependence of…

The electronic properties of heterojunction electron gases formed in GaN/AlGaN core/shell nanowires with hexagonal and triangular cross-sections are studied theoretically. We show that at nanoscale dimensions, the non-polar hexagonal system…