相关论文: Engineering decomposition-resilience and de-coales…
The optical properties of a stack of GaN/AlN quantum discs (QDiscs) in a GaN nanowire have been studied by spatially resolved cathodoluminescence (CL) at the nanoscale (nanoCL) using a Scanning Transmission Electron Microscope (STEM)…
With thermal issues becoming a major challenge to the development of integrated circuits (ICs), high-thermal-conductivity (high-TC) materials are gaining interest from both the industry and academia, especially for high-density…
Thin GaMnAs layers grown by molecular beam epitaxy were subjected to low-temperature post growth annealing, with an amorphous arsenic capping layer deposited on the GaMnAs surface directly after the epitaxial growth. It is shown that the…
Heterostructures of wurtzite based devices have attracted great research interests since the tremendous success of GaN in light emitting diodes (LED) industry. Among the possible heterostructure material candidates, high quality GaN thin…
We demonstrate the manipulation of the Curie temperature of buried layers of the ferromagnetic semiconductor (Ga,Mn)As using nanolithography to enhance the effect of annealing. Patterning the GaAs-capped ferromagnetic layers into nanowires…
Gelation of colloidal nanocrystals (NCs) emerged as a strategy to preserve inherent nanoscale properties in multiscale architectures. Yet available gelation methods still struggle to reliably control nanoscale optical phenomena such as…
In this work, we present an off-axis holography study of GaN/AlN heterostructured nanowires grown by plasma-assisted molecular-beam epitaxy. We discuss the sample preparation of nanowire samples for electron holography and combine potential…
This review focuses on the investigation and enhancement of the thermoelectric properties of semiconducting nanowires (NWs). NWs are nanostructures with typical diameters between few to hundreds of nm and length of few to several microns,…
AlN-GaN heterostructures are central to high-power and high-frequency electronics, including RF devices, power converters, and AI accelerators. An intermediate Al1-xGaxN (AlGaN) layer is often present, either unintentionally during growth…
X-ray diffraction, transmission electron microscopy, and magnetization measurements are employed to study the structural and magnetic properties of Mn-rich (Mn,Ga)As nanocrystals embedded in GaAs. These nanocomposites are obtained by…
In this paper, we describe the design and characterization of 400-nm-long (88 periods) AlxGa1-xN/AlN (0 < x < 0.1) quantum dot superlattices deposited on self-assembled GaN nanowires for application in electron-pumped ultraviolet sources.…
Semiconductor nanowires (NWs) have a broad range of applications for nano- and optoelectronics. The strain field of gallium nitride (GaN) NWs could be significantly changed when contacts are applied to them to form a final device,…
GaN nanowires (NWs) grown by molecular beam epitaxy on Ti films sputtered on Al$_{2}$O$_{3}$ are studied by X-ray diffraction (XRD) and grazing incidence small-angle X-ray scattering (GISAXS). XRD, performed both in symmetric Bragg…
Polarization-dependent scattering anisotropy of cylindrical nanowires has numerous potential applications in, for example, nanoantennas, photothermal therapy, thermophotovoltaics, catalysis, sensing, optical filters and switches. In all…
Enhancement of thermal conductivity via surface electromagnetic waves (SEWs) supported in nanostructures has recently drawn attention as a remedy for issues raised due to the reduction of thermal conductivity in nanoscale confinement. Among…
Self-heating is a severe problem for high-power GaN electronic and optoelectronic devices. Various thermal management solutions, e.g. flip-chip bonding or composite substrates have been attempted. However, temperature rise still limits…
We discuss observations of InN nanowires (NWs) by plan-view high-resolution transmission electron microscopy (TEM). The main difficulties arise from suitable methods available for plan-view specimen preparation. We explore different…
We report on a systematic study of nanomechanical dissipation in high-frequency (approximatively 300 MHz) gallium arsenide optomechanical disk resonators, in conditions where clamping and fluidic losses are negligible. Phonon-phonon…
Nano-scale eutectics, such as rapid solidified Al-Si, exhibit enhanced yield strength and strain hardening but plasticity is limited by cracking of the hard phase (Si). Mechanisms that may suppress cracking and enable plastic co-deformation…
In the rapidly evolving area of integrated photonics, there is a growing need for materials that satisfy the particular requirements of increasingly complex and specialized devices and applications. Present photonic material platforms have…