相关论文: Revised theoretical limit of subthreshold swing in…
Fully conductive band tails cause the subthreshold swing to saturate at temperatures above 1 K. However, recent measurements indicate that below 1 K, the subthreshold swing in certain MOSFET structures resumes a linear scaling with…
In the standard MOSFET description of the drain current $I_{D}$ as a function of applied gate voltage $V_{GS}$, the subthreshold swing $SS(T)\equiv dV_{GS}/d\log I_{D}$ has a fundamental lower limit as a function of temperature $T$ given by…
Cryogenic semiconductor device models are essential in designing control systems for quantum devices and in benchmarking the benefits of cryogenic cooling for high-performance computing. In particular, the saturation of subthreshold swing…
The temperature dependence of the number density of elementary excitations in a semiconductor with account for the temperature dependence of the band gap is obtained. A local lattice distortion within a crystalline domain is discussed.
The physics of low subthreshold devices is interpreted in terms of a gate dependent change in their mode averaged transmission function, in addition to a capacitive shift in their overall mode spectrum. Accordingly, we explore a variety of…
Many metals display resistivity saturation - a substantial decrease in the slope of the resistivity as a function of temperature, that occurs when the electron scattering rate $\tau^{-1}$ becomes comparable to the Fermi energy $E_F/\hbar$…
The sub-threshold swing is the fundamental critical parameter determining the operation of a transistor in low-power applications such as switches. It determines the fraction of dissipation due to the gate capacitance used for turning the…
While cryogenic-temperature subthreshold swing (SS) in crystalline semiconductors has been widely studied, a careful study on the temperature-dependent SS in amorphous oxide semiconductors remains lacking. In this paper, a comprehensive…
Boltzmann relations are widely used in semiconductor physics to express the charge-carrier densities as a function of the Fermi level and temperature. However, these simple exponential relations only apply to sharp band edges of the…
Power dissipation has become a major obstacle in performance scaling of modern integrated circuits, and has spurred the search for devices operating at lower voltage swing. In this letter, we study p-i-n band-to-band tunneling field effect…
We study the leading low temperature dependence of magnetic susceptibility of one-dimensional electrons with fixed total number of particles at the magnetic fields equal to zero temperature critical values where magnetic field induces…
It is shown that a ferroelastic lattice distortion is associated with the superconducting transition both in low- and high-temperature superconductors. A low-temperature ferroelastic transition in crystalline solids produces also a maximum…
By developing a two-dimensional (2D) full quantum simulation, the attributes of carbon nanotube field-effect transistors (CNTFETs) in different temperatures have been comprehensively investigated. Simulations have been performed by…
Defects are crucial in determining the overall physical properties of semiconductors. Generally, the charge-state transition level (TEL), one of the key physical quantities that determines the dopability of defects in semiconductors, is…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
The interplay between the band Jahn-Teller distortion and the superconductivity is studied for the system whose Fermi level lies in two-fold degenerate band. Assuming that the lattice distortion is coupled to the orbital electron density…
Recent measurements on ultra-thin body Negative Capacitance Field Effect Transistors have shown subthreshold behaviors that are not expected in a classical MOSFET. Specifically, subthreshold swing was found to decrease with increased gate…
The doping dependent isotope effect on the critical temperature (Tc) is calculated for multi-band multi-condensate superconductivity near a 2.5 Lifshitz transition. We focus on multi-band effects that arises in nano-structures and in…
The temperature dependence of the electron spin relaxation time in MgB2 is anomalous as it does not follow the temperature dependence of the resistivity above 150 K, it has a maximum around 400 K, and it decreases for higher temperatures.…
The magnetic phase transition is experimentally known to give rise to an anomalous temperature-dependence of the electron resistivity in ferromagnetic crystals. Phenomenological theories based on the interaction between itinerant electron…