相关论文: Design of Atomically Precise Nanoscale Negative Di…
The practical realization of nano-scale electronics faces two major challenges: the precise engineering of the building blocks and their assembly into functional circuits. In spite of the exceptional electronic properties of carbon…
We investigate the atomic-scale tunneling characteristics of bilayer graphene on silicon carbide using the scanning tunneling microscopy. The high-resolution tunneling spectroscopy reveals an unexpected negative differential resistance…
We theoretically investigate negative differential resistance (NDR) of massless and massive Dirac Fermions in double barrier resonant tunneling diodes based on sufficiently short and wide graphene strips. The current-voltage characteristics…
We theoretically investigate negative differential resistance (NDR) for ballistic transport in semiconducting armchair graphene nanoribbon (aGNR) superlattices (5 to 20 barriers) at low bias voltages V_SD < 500 mV. We combine the graphene…
Negative differential thermal resistance (NDTR) in approximate graphene nanoribbons (GNRs) is investigated from one dimension to three dimensions by using classical molecular dynamics method. For single-layer GNRs, NDTR can not be observed…
Nonlinear electrical properties, such as negative differential resistance (NDR), are essential in numerous electrical circuits, including memristors. Several physical origins have been proposed to lead to the NDR phenomena in semiconductor…
In this paper, we report on the controllable negative differential resistance (NDR) in a proposed planar graphene superlattice structure. High value of peak to valley ratio (PVR) is predicted. This is significant because of appearance of…
Bottom-up assembled nanomaterials and nanostructures allow for the studies of rich and unprecedented quantum-related and mesoscopic transport phenomena. However, it can be difficult to quantify the correlations between the geometrical or…
Graphene nanoribbons with armchair edges (AGNRs) have bandgaps that can be flexibly tuned via the ribbon width. A junction made of a narrower AGNR sandwiched between two wider AGNR leads was recently reported to possess two perfect…
New nanotechnology based devices are replacing CMOS devices to overcome CMOS technology's scaling limitations. However, many such devices exhibit non-monotonic I-V characteristics and uncertain properties which lead to the negative…
Hexagonal boron nitride (hBN) is drawing increasing attention as an insulator and substrate material to develop next generation graphene-based electronic devices. In this paper, we investigate the quantum transport in heterostructures…
Precision control of interfacial structures and electronic properties is the key to the realization of functional heterostructures. Here, utilizing the scanning tunneling microscope (STM) both as a manipulation and characterization tool, we…
We propose a graphene device that can generate spin-dependent negative differential resistance (NDR). The device is composed of a sufficiently wide and short graphene and two gated EuO strips deposited on top of it. This scheme avoids…
Field effect transistors with channels made of graphene layer(s) were explored. The graphene layer(s) contacted a distributed array of well-separated semiconductor quantum dots (QDs). The dots were embedded in nano-structured hole-array;…
We determine the conditions in which negative differential resistance (NDR) appears in the C$_{60}$-based molecular device of [Phys. Rev. Lett. {\bf 100}, 036807 (2008)] by means of ab-initio electron-transport simulations. Our calculations…
Materials and devices used in space and advanced energy systems are continuously exposed to high-energy photons and particles, leading to gradual changes in their structural and electronic properties. Gamma-ray exposure is particularly…
Atomically precise graphene nanoribbons are a promising emerging class of designer quantum materials with electronic properties that are tunable by chemical design. However, many challenges remain in the device integration of these…
The negative differential resistance (NDR) tunnel diodes are promising alternative devices for beyond-CMOS computing as they offer several potential applications when integrated with transistors. We propose a novel semiconductor-free NDR…
Current-controlled (also known as "S-type") negative differential resistance (NDR) is of crucial importance to many emerging applications including neuromorphic computing and high-density memristors integration. However, the experimental…
The conductance-voltage spectrum of molecular nanostructures measured by scanning tunneling spectroscopy (STS) is generally assumed to reflect the local density of states of the molecule. This excludes the possibility of observing negative…