相关论文: Impurity in low energy Ar+ ion beam is the cause o…
The production of nanopatterns on the surfaces of targets irradiated by ion beams at low and intermediate energies has developed during the present decade to a salient degree of control over the main pattern features. However, there is…
Self-organized pattern formation by the process of reverse epitaxial growth has been investigated on GaAs (001) surfaces during 1 keV Ar+ bombardment at target temperature of 450 degC for a wide range of incident angles. Highly ordered…
Energetic particle irradiation of solids can cause surface ultra-smoothening, self-organized nanoscale pattern formation, or degradation of the structural integrity of nuclear reactor components. Periodic patterns including high-aspect…
It is known that ion-irradiation can lead surfaces to spontaneously develop patterns with characteristic length scales on the order of only a few nanometers. Pattern formation typically occurs only for irradiation angles beyond a critical…
Ion sputtering induced nanoscale pattern formation on Ge (001) surface by 500 eV Ar+ bombardment has been investigated for a wide range of ion incidence angles at temperature of 300 deg.C. A fourfold symmetric topography forms in the…
On the proper timescale, amorphous solids can flow. Solid flow can be observed macroscopically in glaciers or lead pipes, but it can also be artificially enhanced by creating defects. Ion Beam Sputtering (IBS) is a technique in which ions…
We modify the theory of nanoscale patterns produced by ion bombardment with concurrent impurity deposition to take into account the effect that the near-surface impurities have on the collision cascades. As the impurity concentration is…
Mechanically exfoliated graphene layers deposited on SiO2 substrate were irradiated with Ar+ ions in order to experimentally study the effect of atomic scale defects and disorder on the low-energy electronic structure of graphene. The…
Despite extensive study, fundamental understanding of self-organized patterning by broad-beam ion bombardment is still incomplete and controversial. Understanding the nanopatterning of elemental semiconductors, particularly silicon, is both…
Pattern formation on semiconductor surfaces induced by low energetic ion-beam erosion under normal and oblique incidence is theoretically investigated using a continuum model in form of a stochastic, nonlocal, anisotropic…
We report on the production of ordered assemblies of silicon nanostructures by means of irradiation of a Si(100) substrate with 1.2 keV Ar ions at normal incidence. Atomic Force and High-Resolution Transmission Electron microscopies show…
The core-level and valence band electronic structure of the well-defined near-surface layer of n-GaAs (100) has been studied by synchrotron-based high-resolution photoelectron spectroscopy before and after modification of the layer by an…
Coherent grazing-incidence small-angle X-ray scattering is used to investigate the average kinetics and the fluctuation dynamics during self-organized nanopatterning of silicon by Ar$^+$ bombardment at 65$^{\circ}$ polar angle. At early…
Strain at surfaces and interfaces play an important role in the optical and electronic properties of materials. MeV ion-induced strain determination in single crystal silicon substrates and in Ag (nanoisland)/Si(111) at surface and…
The changes of surface structure, induced by electron beam irradiation (EBI) on the surface of poly(aryl-ether-ether-ketone) (PEEK), were investigated by using a range of various experimental techniques, such as tribology, Raman, AFM, NMR,…
Electron scattering on a thin layer where the potential depends self-consistently on the wave function has been studied. When the amplitude of the incident wave exceeds a certain threshold, a soliton-shaped brightening (darkening) appears…
Costache et al. have reported recently a new type of periodic patterns generated at femtosecond laser ablation of transparent dielectrics (Appl. Surf. Sci. 186, 352(2002)). They show features known from other pattern forming systems far…
We have observed the formation of ripples in a number of thin metal films, e.g. Au, Pt, Ag, Cu and Co under Ar^{+} ion beam sputtering at grazing incidence. The structures are found to be quite stable under ambient conditions. The results…
Topography evolution of Si(100) surface due to oblique incidence low energy ion beam sputtering (IBS) is investigated. Experiments were carried out at different elevated temperatures from 20$^{\circ}$C to 450$^{\circ}$C and at each…
Bare reverse biased silicon photodiodes were exposed to 3eV He+, Ne+, Ar+, N2+, N+ and H2O+ ions. In all cases an increase of the reverse current through the diode was observed. This effect and its dependence on the ionization energy of the…