相关论文: Spatial Imaging of Charge Transport in Silicon at …
We present direct imaging measurements of charge transport across a 1 cm x 1 cm x 4 mm-thick crystal of high purity silicon ($\sim$15 k$\Omega$-cm) at temperatures of 5 K and 500 mK. We use these data to measure the lateral diffusion of…
We show that oblique propagation of electrons in crystals of Ge and Si, where the electron velocity does not follow the electric field even on average, can be explained using standard anisotropic theory for indirect gap semiconductors.…
The mobility of electrons and holes in silicon depends on many parameters. Two of them are the electric field and the temperature. It has been observed previously that the mobility in the transition region between ohmic transport and…
The anisotropic electron transport in the (001) plane of sublimation-grown Cl$_{2}$-NDI (naphthalene diimide) single crystals is analysed over a temperature range between 175 K and 300 K. Upon cooling from room temperature to 175 K the…
The controversy regarding the precise nature of the high-temperature phase of 1T-TiSe2 lasts for decades. It has intensified in recent times when new evidence for the excitonic origin of the low-temperature charge-density wave state started…
Spatiotemporal dynamics of electron-hole pairs locally excited in a silicon-on-insulator structure by indirect interband absorption are studied by measuring differential transmission caused by free-carrier absorption of a probe pulse tuned…
We propose and study theoretically a new mechanism of electron-impurity scattering in doped seminconductors with large dielectric constant. It is based upon the idea of \textit{vector} character of deformations caused in the crystalline…
We report on the effect of elastic intervalley scattering on the energy transport between electrons and phonons in many-valley semiconductors. We derive a general expression for the electron-phonon energy flow rate at the limit where…
The in-plane electron mobility has been calculated in InAs/GaSb type-II superlattices at low temperatures. The interface roughness scattering and ionized impurity scattering are investigated as the dominant scattering mechanisms in limiting…
Experiments aiming to directly detect dark matter through particle recoils can achieve energy thresholds of $\mathcal{O}(1\,\mathrm{eV})$. In this regime, ionization signals from small-angle Compton scatters of environmental $\gamma$-rays…
An angle-resolved photoemission study of the scattering rate in the superconducting phase of the high-temperature superconductor \LSCO\ with $x=0.145$ and $x=0.17$, as a function of binding energy and momentum, is presented. We observe that…
We calculate within the Boltzmann equation approach the charged impurity scattering limited low temperature electronic resistivity of low density $n$-type inversion layers in Si MOSFET structures. We find a rather sharp quantum to classical…
Electron transport in Ge at various temperatures down to 20 mK has been investigated using particle Monte Carlo simulation taking into account ionized impurity and inelastic phonon scattering. The simulations account for the essential…
Effective electron mobilities are obtained by transport measurements on InAs nanowire field-effect transistors at temperatures ranging from 10-200 K. The mobility increases with temperature below ~ 30 - 50 K, and then decreases with…
The temperature dependences of the conductivity \sigma(T) for strongly interacting 2D electron system in silicon have been analyzed both in zero magnetic field and in spin-polarizing magnetic field of 14.2T, parallel to the sample plane.…
We report a transient absorption microscopy study of charge carrier dynamics in bulk MoS2 crystals at room temperature. Charge carriers are injected by interband absorption of a 555-nm pulse, and probed by measuring differential reflection…
We report on a systematic study of electronic transport in tetracene single crystals by means of space charge limited current spectroscopy and time of flight measurements. Both $I$-$V$ and time of flight measurements show that the…
Anisotropic nanomaterials possess interesting thermal transport properties because they allow orientation of heat fluxes along preferential directions due to a high ratio (up to three orders of magnitude) between their in-plane and…
In many physical situations in which many-body assemblies exist at temperature $T$, a characteristic quantum-mechanical time scale of approximately $\hbar/k_{B}T$ can be identified in both theory and experiment, leading to speculation that…
Theory of low temperature kinetic phenomena in metals without inversion center is developed. Kinetic properties of a metal without inversion center are described by four kinetic equations for the diagonal (intra-band) and the off-diagonal…