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We investigate the effects of uniaxial strain on the transport properties of vertical devices made of two twisted graphene layers, which partially overlap each other. We find that because of the different orientations of the two graphene…

介观与纳米尺度物理 · 物理学 2015-02-26 Viet Hung Nguyen , Huy-Viet Nguyen , Jerome Saint Martin , Philippe Dollfus

We present electrical transport measurements of a van-der-Waals heterostructure consisting of a graphene nanoribbon separated by a thin boron nitride layer from a micron-sized graphene sheet. The interplay between the two layers is…

介观与纳米尺度物理 · 物理学 2015-05-29 D. Bischoff , M. Eich , A. Varlet , P. Simonet , T. Ihn , K. Ensslin

We study electron transport in a strained graphene sheet subjected to a sequence of $N$ electrostatic and magnetic barriers. Employing a modified and improved transfer-matrix framework, we examine how the transmission and reflection…

We argue that twisted graphene nanoribbons subjected to a transverse electric field can operate as a variety of nanoelectronic devices, such as tunable tunnel diodes with current-voltage characteristics controlled by the transverse field.…

介观与纳米尺度物理 · 物理学 2018-12-14 Marta Saiz-Bretín , Andrey V. Malyshev , Francisco Domínguez-Adame

We investigate the combined influence of structural defects and uniaxial longitudinal strain on the electronic transport properties of armchair graphene nanoribbons using the numerical approach based on the semiempirical tight-binding…

介观与纳米尺度物理 · 物理学 2013-09-30 Thomas Lehmann , Dmitry A. Ryndyk , Gianaurelio Cuniberti

Coulomb blockade is observed in a graphene nanoribbon device with a top gate. When two pn junctions are formed via the back gate and the local top gate, electrons are confined between the pn junctions which act as the barriers. When no pn…

介观与纳米尺度物理 · 物理学 2009-12-11 Xinglan Liu , Jeroen B. Oostinga , Alberto F. Morpurgo , Lieven M. K. Vandersypen

More than a decade after the discovery of graphene, ballistic transport in nanostructures based on this intriguing material still represents a challenging field of research in two-dimensional electronics. The presence of rough edges in…

Graphene has been proposed as a promising material for future nanoelectronics because of its unique electronic properties. Understanding the scaling behavior of this new nanomaterial under common experimental conditions is of critical…

介观与纳米尺度物理 · 物理学 2015-05-27 Yang Sui , Tony Low , Mark Lundstrom , Joerg Appenzeller

Graphene spintronics offers a promising route to achieve low power 2D electronics for next generation classical and quantum computation. As device length scales are reduced to the limit of the electron mean free path, the transport…

In this work we present a theoretical study of transport properties of a double crossbar junction composed by segments of graphene ribbons with different widths forming a graphene quantum dot structure. The systems are described by a…

介观与纳米尺度物理 · 物理学 2011-04-29 Jhon W. Gonzalez , Monica Pacheco , Luis Rosales , Pedro Orellana

Few-layer graphene deposited on semiconductor nanorods separated by undoped spacers has been studied in perspective for the fabrication of stable nanoresonators. We show that an applied bias between the graphene layer and the nanorod…

The success of all-graphene electronics is severely hindered by the challenging realization and subsequent integration of semiconducting channels and metallic contacts. Here, we comprehensively investigate the electronic transport across…

介观与纳米尺度物理 · 物理学 2020-11-24 Kristiāns Čerņevičs , Oleg V. Yazyev , Michele Pizzochero

Motivated by recent advances in fabricating graphene nanostructures, we find that an electron can be trapped in Z-shaped graphene nanoconstriction with zigzag edges. The central section of the constriction operates as a single-level quantum…

介观与纳米尺度物理 · 物理学 2010-09-23 Adam Rycerz

We investigate the impact of strained nanobubbles on the conductance characteristics of graphene nanoribbons using a combined molecular dynamics - tight-binding simulation scheme. We describe in detail how the conductance, density of…

介观与纳米尺度物理 · 物理学 2015-09-30 D. A. Bahamon , Zenan Qi , Harold S. Park , Vitor M. Pereira , David K. Campbell

Graphene nanoribbons (GNRs) are promising components in future nanoelectronics due to the large mobility of graphene electrons and their tunable electronic band gap in combination with recent experimental developments of on-surface…

介观与纳米尺度物理 · 物理学 2017-02-03 Pedro Brandimarte , Mads Engelund , Nick Papior , Aran Garcia-Lekue , Thomas Frederiksen , Daniel Sánchez-Portal

We have developed the combination of an etching and deposition technique that enables the fabrication of locally gated graphene nanostructures of arbitrary design. Employing this method, we have fabricated graphene nanoconstrictions with…

介观与纳米尺度物理 · 物理学 2009-11-13 Barbaros Özyilmaz , Pablo Jarillo-Herrero , Dmitri Efetov , Philip Kim

Graphene nanoribbons display an imperfectly understood transport gap. We measure transport through nanoribbon devices of several lengths. In nanoribbons of length greater than or equal to 250 nm we observe transport through multiple quantum…

介观与纳米尺度物理 · 物理学 2009-01-02 Kathryn Todd , Hung-Tao Chou , Sami Amasha , David Goldhaber-Gordon

Using a simple setup to bend a flexible substrate, we demonstrate deterministic and reproducible in-situ strain tuning of graphene electronic devices. Central to this method is the full hBN encapsulation of graphene, which preserves the…

Grain boundaries (GBs) are ubiquitous in polycrystalline graphene materials obtained by various growth methods. It has been shown previously that considerable electrical transport gap can be opened by grain boundaries. On the other hand,…

介观与纳米尺度物理 · 物理学 2012-08-31 S. Bala Kumar , Jing Guo

Using ab initio methods we have investigated the fluorination of graphene and find that different stoichiometric phases can be formed without a nucleation barrier, with the complete "2D-Teflon" CF phase being thermodynamically most stable.…

材料科学 · 物理学 2011-01-26 Morgana A. Ribas , Abhishek K. Singh , Pavel B. Sorokin , Boris I. Yakobson