相关论文: Hole Mobility Model for Si Double-Gate Junctionles…
We theoretically investigate spin transport in half-metallic ferromagnets at finite temperatures. The side-jump and skew-scattering contributions to spin Hall conductivity are derived using the Kubo formula. The electron-magnon interaction…
We construct the Einstein-axions AdS black hole from Born-Infeld electrodynamics. Various DC transport coefficients of the dual boundary theory are computed. The DC electric conductivity depends on the temperature, which is a novel property…
The field-effect mobility in an organic thin-film transistor is studied theoretically. From a percolation model of hopping between localized states and a transistor model an analytic expression for the field-effect mobility is obtained. The…
Ambipolar transport is a commonly occurring theme in semimetals and semiconductors. Here we present an analytical formulation of the conductivity for a two-band system. Electron and hole carrier densities and their respective conductivities…
Buried-channel semiconductor heterostructures are an archetype material platform to fabricate gated semiconductor quantum devices. Sharp confinement potential is obtained by positioning the channel near the surface, however nearby surface…
In this work, we present a new construction of black hole solutions in non-commutative gauge theory by applying the Seiberg-Witten map directly to interaction potentials before solving Einstein's equations. This approach provides a…
We investigate the transport properties of an anisotropic two-dimensional electron gas with a quadratic spin texture, described by a low-energy effective $ k\cdot p$ model, in the presence of $S=1/2$ Kondo impurities. We develop a Green's…
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m^2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al_2O_3, as…
We describe a new approach to compute the electron-phonon self-energy and carrier mobilities in semiconductors. Our implementation does not require a localized basis set to interpolate the electron-phonon matrix elements, with the advantage…
A two miniband model for electron transport in semiconductor superlattices that includes scattering and interminiband tunnelling is proposed. The model is formulated in terms of Wigner functions in a basis spanned by Pauli matrices,…
The modified superexchange model is used to derive the expression for nonresonant tunneling conductance mediated by localized and delocalized molecular orbitals associated with the terminal and the interior molecular units respectively. The…
We develop and analyze a two-oscillator model for black hole evaporation in which an effective geometric degree of freedom and a representative Hawking radiation mode are described by coupled harmonic oscillators with opposite signs in…
Using the bicomplex approach we discuss a noncommutative system in two--dimensional Euclidean space. It is described by an equation of motion which reduces to the ordinary sine--Gordon equation when the noncommutation parameter is removed,…
A theoretical study on the nonlinear transport of holes in the transient and steady state of p-doped 4H-SiC under the influence of high electric fields is presented. It is based on a nonlinear quantum kinetic theory which provides a clear…
Quantization in the inversion layer and phase coherent transport are anticipated to have significant impact on device performance in 'ballistic' nanoscale transistors. While the role of some quantum effects have been analyzed qualitatively…
In this work, the transport of tunnel field-effect transistor (TFET) based on vertically stacked hereto-structures from 2D transition metal dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. WTe2-MoS2…
We present a novel scheme for universal quantum computation based on spinless interacting bosonic quantum walkers on a piecewise-constant graph, described by the two-dimensional Bose-Hubbard model. Arbitrary X and Z rotations are…
The hole carrier field-effect mobility of hybrid molybdenum disulfide (MoS2) nanoparticles suspended in poly(3-hexylthiophene) (P3HT) thin film transistor (TFT) was found to be enhanced when it compared to P3HT-only TFTs. The improvement in…
Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility…
The characteristics of cation radical (hole) migration in heterogeneous DNA were investigated on the basis of Kubo formula, in which correlation functions were obtained from solutions of systems of Bogoliubov hierarchy. The cutting of…