混合MoS2-P3HT半导体层的薄膜晶体管电学性能
应用物理
2020-02-05 v2
摘要
研究发现，悬浮于聚(3-己基噻吩)（P3HT）中的混合二硫化钼（MoS2）纳米颗粒的空穴载流子场效应迁移率相较于纯P3HT薄膜晶体管（TFT）有所提升。空穴电荷输运的改善被发现是P3HT中MoS2浓度的函数，高MoS2浓度导致器件导通电流增加。此外，Au的功函数高达5.1 eV，与P3HT的HOMO能级相匹配。我们发现MoS2和Au具有适于空穴输运和注入的能级。
引用
@article{arxiv.2001.07304,
title = {Thin-film transistor electrical performance of hybrid MoS 2 -P3HT semiconductor layers},
author = {Hyunwoo Choi and William Wong},
journal= {arXiv preprint arXiv:2001.07304},
year = {2020}
}
备注
This paper was withdrawn by the author since it needs further experimental evidence to prove the result of this paper