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A trapping-detrapping model is proposed for explaining the current fluctuation behavior in organic semiconductors (polyacenes) operating under current-injection conditions. The fraction of ionized traps obtained from the current-voltage…

材料科学 · 物理学 2010-08-17 Anna Carbone , Cecilia Pennetta , Lino Reggiani

Low-frequency current fluctuations are investigated over a bias range covering {\em ohmic}, {\em trap-filling} and {\em space-charge-limited current} regimes in polycrystalline polyacenes. The relative current noise power spectral density…

无序系统与神经网络 · 物理学 2007-05-23 A. Carbone , B. K. Kotowska , D. Kotowski

We investigate theoretically the V-I characteristics and voltage noise of superconducting tunnel junctions with small critical current via the matrix-continued-fraction method. Special attention is paid to the large hysteresis in the V-I…

介观与纳米尺度物理 · 物理学 2012-12-05 Martin Žonda , Tomáš Novotný

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene…

材料科学 · 物理学 2009-12-21 Wolfgang L. Kalb , Fabian Meier , Kurt Mattenberger , Bertram Batlogg

We report a theoretical/experimental study of current-voltage characteristics (I-V) of graphene devices near the Dirac point. The I-V can be described by a power law (I \propto V^\alpha, with 1< \alpha <= 1.5). The exponent is higher when…

We studied the influence of oxygen on the electronic trap states in a pentacene thin film. This was done by carrying out gated four-terminal measurements on thin-film transistors as a function of temperature and without ever exposing the…

材料科学 · 物理学 2009-12-21 Wolfgang L. Kalb , Kurt Mattenberger , Bertram Batlogg

The trap-induced hysteresis on the performance of a graphene field-effect transistor is experimentally diminished here by applying consecutive gate-to-source voltage pulses of opposing polarity. This measurement scheme is a practical and…

介观与纳米尺度物理 · 物理学 2020-10-29 Anibal Pacheco-Sanchez , Nikolaos Mavredakis , Pedro C. Feijoo , Wei Wei , Emiliano Pallecchi , Henri Happy , David Jiménez

The current - voltage dependence of the transverse tunneling current through the electron or hole traps in a DNA is investigated. The hopping of the charge between the sites of the trap and the charge-phonon coupling results in a staircase…

介观与纳米尺度物理 · 物理学 2009-11-11 V. Apalkov , T. Chakraborty

We report spatially resolved optical probing of charge traps in organic field-effect transistors using focussed laser illumination. By scanning a 635 nm laser across the transistor channel and simultaneously acquiring transfer…

材料科学 · 物理学 2025-09-24 Dean Kos , Marta Mas-Torrent

Transient currents in atomically thin MoTe$_2$ field-effect transistor are measured during cycles of pulses through the gate electrode. The transients are analyzed in light of a newly proposed model for charge trapping dynamics that renders…

We measure top-gated graphene field effect transistors (GFETs) with nanosecond-range pulsed gate and drain voltages. Due to high-k dielectric or graphene imperfections, the drain current decreases ~10% over time scales of ~10 us, consistent…

We present a simple one-dimensional trapping model prompted by the problem of ion current across biological membranes. The trap is modeled mimicking the ionic channel membrane behaviour. Such voltage-sensitive channels are open or closed…

统计力学 · 物理学 2009-10-31 Alejandro D. Sanchez , Jorge A. Revelli , Horacio S. Wio

We study theoretically the current-voltage characteristics (IVCs) of the Josephson field effect transistor - a ballistic SNINS junction with superconducting (S) electrodes confining a planar normal metal region (N), which is controlled by…

超导电性 · 物理学 2017-02-01 E. V. Bezuglyi , E. N. Bratus' , V. S. Shumeiko

The current-voltage (I-V) characteristics of armchair graphene nanoribbons under a local uniaxial tension are investigated by using first principles quantum transport calculations. It is shown that for a given value of bias-voltage, the…

介观与纳米尺度物理 · 物理学 2010-06-07 Mehmet Topsakal , V. M. Kemal Bagci , Salim Ciraci

The $f^{-\gamma}$ sloped current noise power spectra, observed in organic semiconductors, have been interpreted within a {\em variable range hopping} mechanism of the fluctuations. The relative current noise power spectral density ${\cal…

无序系统与神经网络 · 物理学 2009-03-20 A. Carbone , B. K. Kotowska , D. Kotowski

The spectral density of localized states in the band gap of pentacene (trap DOS) was determined with a pentacene-based thin-film transistor from measurements of the temperature dependence and gate-voltage dependence of the contact-corrected…

材料科学 · 物理学 2010-02-08 Wolfgang L. Kalb , Bertram Batlogg

It was recently predicted [Phys. Rev. B 75, 193301 (2007)] that spin blockade may develop at nonmagnetic semiconductor/perfect ferromagnet junctions when the electron flow is directed from the semiconductor into the ferromagnet. Here we…

介观与纳米尺度物理 · 物理学 2008-03-23 Yu. V. Pershin , M. Di Ventra

The current-voltage (I-V) curve is the basic characteristic of a superconducting wire or tape. Measuring I-V curves is generally problematic when samples have poor stabilization. Soldering voltage taps to an active part of the conductor…

超导电性 · 物理学 2014-11-05 M. Vojenciak , F. Grilli , A. Stenvall , A. Kling , W. Goldacker

We present a set of experimental results concerning the power spectrum of current noise, detected on a granular high Tc superconductor submitted either to a slowly varying magnetic field or to a varying current intensity. Experiments were…

超导电性 · 物理学 2009-11-10 P. Mazzetti , P. Tura , A. Masoero , A. Stepanescu

Transitions to immeasurably small electrical resistance in thin films of Ag/Au nanostructure-based films have generated significant interest because such transitions can occur even at ambient temperature and pressure. While the zero-bias…

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