相关论文: Analytical Modeling of Metal Gate Granularity base…

In this work, quantum ballistic simulation study of a III-V tri-gate MOSFET has been presented. At the same time, effects of device parameter variation on ballistic, subthrshold and short channel performance is observed and presented. The…

Tunnel Field Effect Transistors (TFET) have extremely low leakage current, exhibit excellent subthreshold swing and are less susceptible to short channel effects. However, TFETs do face certain special challenges, particularly with respect…

In moir\'e heterostructures, gate-tunable insulating phases driven by electronic correlations have been recently discovered. Here, we use transport measurements to characterize the gate-driven metal-insulator transitions and the metallic…

This paper investigates the effect of process variations on unity gain frequency (ft) in 30 nm gate length FinFET by performing extensive TCAD simulations. Six different geometrical parameters, channel doping, source/drain doping and gate…

A simulation methodology for ultra-scaled InAs quantum well field effect transistors (QWFETs) is presented and used to provide design guidelines and a path to improve device performance. A multiscale modeling approach is adopted, where…

In this paper we have developed a two dimensional (2D) analytical model for surface potential and drain current for a long channel Dual Material Gate (DMG) Silicon-on-Insulator (SOI) Tunneling Field Effect Transistor (TFET). This model…

Two-dimensional transition metal dichalcogenide (2D-TMD) monolayers, which reveal remarkable semiconductor properties, are the subject of active experimental research.Recently it has been shown experimentally that quantum yield in MoS2 and…

Randomized experiments (or A/B tests) are widely used to evaluate interventions in dynamic systems such as recommendation platforms, marketplaces, and digital health. In these settings, interventions affect both current and future system…

In this work, the threshold voltage instability of normally-off p-GaN high electron mobility transistors (HEMTs) has been investigated by monitoring the gate current density during device on-state. The origin of the gate current variations…

The tremendous progress in Metal Oxide Semiconductor (MOS) technology has been a direct consequence of device scaling for past several decades. But as we have entered the nanometer era many problems related to leakage currents and other…

Ultrafast real-time dynamics are critical for understanding a broad range of physical processes. Real-time time-dependent density functional theory (rt-TDDFT) has emerged as a powerful computational tool for simulating these dynamics,…

Currently, memristor devices suffer from variability between devices and from cycle to cycle. In this work, we study the impact of device variations on memristive Material Implication (IMPLY). New constraints for different parameters and…

Randomness in the void distribution within a ductile metal complicates quantitative modeling of damage following the void growth to coalescence failure process. Though the sequence of micro-mechanisms leading to ductile failure is known…

The increasingly wide use of deep machine learning techniques in computational mechanics has significantly accelerated simulations of problems that were considered unapproachable just a few years ago. However, in critical applications such…

We present a quantum averaging theory (QAT) for analytically modeling unitary gate dynamics in driven quantum systems beyond the rotating-wave approximation. QAT addresses the simultaneous presence of distinct timescales by generating a…

Ten years have passed since the beginning of graphene research. In this period we have witnessed breakthroughs both in fundamental and applied research. However, the development of graphene devices for mass production has not yet reached…

Ovonic threshold switching is the key process for several applications of chalcogenide alloys including phase change memories and selector elements in cross-points arrays. Very recently, it has been shown that the threshold switching…

Dual-material double-gate tunnel field effect transistor (DMDG TFET) is a promising candidate for low-power, high-speed electronics due to enhanced electrostatic control and superior switching characteristics. Integrating a pocket region…

The effective interaction between electrons in two-dimensional materials can be modified by their environment, enabling control of electronic correlations and phases. Here, we study the dependence of electronic correlations in twisted…

The commercialization of non-volatile memories based on ferroelectric transistors (FeFETs) has remained elusive due to scaling, retention, and endurance issues. Thus, it is important to develop accurate characterization tools to quantify…