相关论文: Analytical Modeling of Metal Gate Granularity base…
High-fidelity quantum gate operations are essential for achieving scalable quantum circuits. In spin qubit quantum computing systems, metallic gates and antennas which are necessary for qubit operation, initialization, and readout, also…
Quantum criticality of metal-insulator transitions in correlated electron systems is shownto belong to an unconventional universality class with violation of Ginzburg-Landau-Wilson(GLW) scheme formulated for symmetry breaking transitions.…
The effect of decreasing Drain-Induced Barrier Lowering (DIBL) is one of the non-desirable short-channel effects in the MOSFETs family, which causes the threshold voltage of the transistor to be reduced by increasing the voltage of the…
Density functional theory (DFT) calculations of 58 liquid elements at their triple point show that most metals exhibit near proportionality between thermal fluctuations between virial and potential-energy in the isochoric ensemble. This…
The electrostatic gating effects on molecular transistors are investigated using the density functional theory (DFT) combined with the nonequilibrium Green's function (NEGF) method. When molecular energy levels are away from the Fermi…
Narrow-channel accumulated body nMOSFET devices with p-type side-gates surrounding the active area have been electrically characterized between 100 and 400 K with varied side-gate biasing (Vside). The subthreshold slope (SS) and drain…
The potential barrier between source and gate in HEMTs and between source and channel in MOSFET controls the current output and the velocity injection of electrons in the channel [1], [2]. In non self aligned structures the electric field…
During the last years, Graphene based Field Effect Transistors (GFET) have shown outstanding RF performance; therefore, they have attracted considerable attention from the electronic devices and circuits communities. At the same time,…
Financial time-series forecasting is a high-stakes problem where regime shifts and shocks make point-accurate yet overconfident models dangerous. We propose Uncertainty-Gated Generative Modeling (UGGM), which treats uncertainty as an…
We investigate the twist-angle and gate dependence of the proximity-induced exchange coupling in the monolayer transition-metal dichalcogenides (TMDCs) MoSe$_2$ and WSe$_2$ due to the vdW coupling to the ferromagnetic semiconductor CrI$_3$,…
In this work, the performance of Tunnel Field-Effect Transistors (TFETs) based on two-dimensional Transition Metal Dichalcogenide (TMD) materials is investigated by atomistic quantum transport simulations. One of the major challenges of…
In this paper, we have worked out a pseudo two dimensional (2D) analytical model for surface potential and drain current of a long channel p-type Dual Material Gate (DMG) Gate All-Around (GAA) nanowire Tunneling Field Effect Transistor…
In recent years, a lot of scientific research effort has been put forth for the investigation of Transition Metal Dichalcogenides (TMDC) and other Two Dimensional (2D) materials like Graphene, Boron Nitride. Theoretical investigation on the…
This work investigates the variability of tungsten disulfide (WS$_2$)-based devices by experimental characterization in view of possible application in the field of hardware security. To this aim, a preliminary analysis was performed by…
Transition metal dichalcogenides (TMDs) exist in various crystal structures with semiconducting, semi-metallic, and metallic properties. The dynamic control of these phases is of immediate interest for next generation electronics such as…
Rapidly estimating the remaining wall thickness (RWT) is paramount for the non-destructive condition assessment evaluation of large critical metallic pipelines. A robotic vehicle with embedded magnetism-based sensors has been developed to…
The ability to tune material properties using gate electric field is at the heart of modern electronic technology. It is also a driving force behind recent advances in two-dimensional systems, such as gate-electric-field induced…
In this paper, we propose the application of a Dual Material Gate (DMG) in a Tunnel Field Effect Transistor (TFET) to simultaneously optimize the on-current, the off-current and the threshold voltage, and also improve the average…
A transition in source-drain current vs back gate voltage ID - VBG characteristics from extrinsic polar molecule dominant hysteresis to anti-hysteresis induced by an oxygen deficient surface layer that is intrinsic to the ferroelectric thin…
A combined theoretical/numerical/experimental program is outlined for extending the ILG approach to consider time lags, stochasticity and multiphysics couplings. Through this extension it is possible to discuss the interplay between…