中文
相关论文

相关论文: High frequency optomechanical disk resonators in I…

200 篇论文

The sub-bandgap absorption and ultrafast relaxation in a GaAs/ErAs/GaAs heterostructure are reported. The infrared absorption and 1550 nm-excited ultrafast photo-response are studied by Fourier transform infrared (FTIR) spectrometry and…

Recent studies have demonstrated the potential of antiferromagnets as the active component in spintronic devices. This is in contrast to their current passive role as pinning layers in hard disk read heads and magnetic memories. Here we…

The development of nanoscale nonlinear elements in photonic integrated circuits is hindered by the physical limits to the nonlinear optical response of dielectrics, which requires that the interacting waves propagate in transparent volumes…

We theoretically demonstrate negative refraction and sub-wavelength resolution below the diffraction limit in the UV and extreme UV ranges using semiconductors. The metal-like re-sponse of typical semiconductors such as GaAs or GaP makes it…

Achieving uniform nanowire size, density, and alignment across a wafer is challenging, as small variations in growth parameters can impact performance in energy harvesting devices like solar cells and photodetectors. This study demonstrates…

AlGaAs is a promising integrated nonlinear photonics material with enormous optical nonlinearity and high refractive index. Nevertheless, presently AlGaAs microring resonators exhibiting high quality factors and tight optical confinement…

Hexagonal group IV materials like silicon and germanium are expected to display remarkable optoelectronic properties for future development of photonic technologies. However, the fabrication of hexagonal group IV semiconductors within the…

Numerous efforts have been devoted to improve the electronic and optical properties of III-V compound materials via reduction of their nonradiative states, aiming at highly-efficient III-V sub-micrometer devices. Despite many advances,…

We present the direct heteroepitaxial growth of high-quality InGaAs quantum dots on silicon, enabling scalable, cost-effective quantum photonics devices compatible with CMOS technology. GaAs heterostructures are grown on silicon via a GaP…

介观与纳米尺度物理 · 物理学 2023-11-28 Imad Limame , Peter Ludewig , Ching-Wen Shih , Marcel Hohn , Chirag C. Palekar , Wolfgang Stolz , Stephan Reitzenstein

We fabricated an acousto-optic semiconductor hybrid device for strong optomechanical coupling of individual quantum emitters and a surface acoustic wave. Our device comprises a surface acoustic wave chip made from highly piezoelectric…

介观与纳米尺度物理 · 物理学 2017-10-02 Emeline D. S. Nysten , Yong Heng Huo , Hailong Yu , Guo Feng Song , Armando Rastelli , Hubert J. Krenner

GaAs-based nanowires are among the most promising candidates for realizing a monolithical integration of III-V optoelectronics on the Si platform. To realize their full potential for applications as light absorbers and emitters, it is…

We present a simple fabrication method for the realization of suspended GaAs nanomembranes for cavity quantum optomechanics experiments. GaAs nanomembranes with an area of 1.36 mm by 1.91 mm and a thickness of 160 nm are obtained by using a…

介观与纳米尺度物理 · 物理学 2015-05-30 Jin Liu , Koji Usami , Andreas Naesby , Tolga Bagci , Eugene S. Polzik , Peter Lodahl , Søren Stobbe

Aluminum, as a metallic material for plasmonics, is of great interest because it extends the applications of surface plasmon resonance into the ultraviolet (UV) region and excels noble metals in the natural abundance, cost and compatibility…

材料科学 · 物理学 2014-12-11 Hsuan-Wei Liu , Fan-Cheng Lin , Shi-Wei Lin , Jau-Yang Wu , Sheng-Di Lin , Jer-Shing Huang

We demonstrate an efficient core-shell GaAs/AlGaAs nanowire photodetector operating at room temperature. The design of this nanoscale detector is based on a type-I heterostructure combined with a metal-semiconductor-metal (MSM) radial…

介观与纳米尺度物理 · 物理学 2016-01-20 X. Dai , S. Zhang , Z. Wang , G. Adamo , H. Liu , Y. Huang , C. Couteau , C. Soci

The coherent modulation of electronic and vibrational nonlinearities in atoms and molecular gases by intense few-cycle pulses has been used for high-harmonic generation in the soft X-ray and attosecond regime, as well as for Raman frequency…

材料科学 · 物理学 2013-09-16 Muneaki Hase , Masayuki Katsuragawa , Anca Monia Constantinescu , Hrvoje Petek

High-reflectance in many state-of-the-art optical devices is achieved with noble metals. However, metals are limited by losses, and for certain applications, by their high mass density. Using a combination of ab initio and optical transfer…

The III-Se layered semiconductors, including InSe and GaSe, are promising optoelectronic materials due to their relatively high electron mobilities at room temperature, nonlinear optical responses, ferroelectricity, self-passivated van der…

材料科学 · 物理学 2026-03-10 Joshua Eickhoff , Wendy L. Sarney , Sina Najmaei , Daniel A. Rhodes , Jason Kawasaki

Increasing the interaction between light and mechanical resonators is an ongoing endeavor in the field of cavity optomechanics. Optical microcavities allow for boosting the interaction strength through their strong spatial confinement of…

Terahertz (THz) technologies have been of interest for many years due to the variety of applications including gas sensing, nonionizing imaging of biological systems, security and defense, etc. To date, scientists have used different…

Nonlinear optics is an increasingly important field for scientific and technological applications, owing to its relevance and potential for optical and optoelectronic technologies. Currently, there is an active search for suitable nonlinear…