相关论文: High frequency optomechanical disk resonators in I…
Gallium Arsenide and related compound semiconductors lie at the heart of optoelectronics and integrated laser technologies. Shaped at the micro and nano-scale, they allow strong interaction with quantum dots and quantum wells, and promise…
Epitaxial low temperature grown GaAs (LT-GaAs) on silicon (LT-GaAs/Si) has the potential for terahertz (THz) photoconductive antenna applications. However, crystalline, optical and electrical properties of heteroepitaxial grown LT-GaAs/Si…
Optically active III-V group semiconductor quantum dots (QDs) are the leading element of the upcoming safe quantum communication. However, the entire electronic and IT infrastructure relies on silicon-based devices, with silicon also…
We propose an optomechanical laser based on III-V compounds which exhibits self-pulsation in the presence of a dissipative optomechanical coupling. In such a laser cavity, radiation pressure drives the mechanical degree of freedom and its…
Advanced photonic materials showing two-photon absorption (2PA) have been widely explored to develop three-dimensional imaging, micro and nanofabrication, all-optical switching, lithography on a nanoscale and many other enabling…
Low phase noise lasers based on the combination of III-V semiconductors and silicon photonics are well established in the near-infrared spectral regime. Recent advances in the development of low-loss silicon nitride-based photonic…
n-Ga2O3/p-GaN heterojunction based photodetector devices are fabricated on Si-doped (-201) \beta-Ga2O3 epitaxial layers grown by pulsed laser deposition (PLD) technique on p-type c-GaN/sapphire templates. These devices demonstrate the…
The 4-bar crystal symmetry in materials such as GaAs can enable quasi-phasematching for efficient frequency conversion without poling, twinning or other engineered domain inversions. 4-bar symmetry means that a 90 degree rotation is…
Aluminum gallium arsenide has highly desirable properties for integrated parametric optical interactions: large material nonlinearities, maturely established nanoscopic structuring through epitaxial growth and lithography, and a large band…
Conventional semiconductors such as silicon and InGaAs based photodetectors have encountered a bottleneck in modern electronics and photonics in terms of spectral coverage, low resolution, non-transparency, non-flexibility and…
We study the optical reflectivity of three-dimensional (3D) photonic band gap crystals with increasing thickness. The crystals consist of GaAs plates with nanorod arrays that are assembled by an advanced stacking method into high-quality 3D…
We report a systematic investigation of both three-photon absorption (3PA)spectra and wavelength dispersions of Kerr-type nonlinear refraction in wide-gap semiconductors. The Z-scan measurements are recorded for both ZnO and ZnS with…
The compact size, scalability, and strongly confined fields in integrated photonic devices enable new functionalities in photonic networking and information processing, both classical and quantum. Gallium phosphide (GaP) is a promising…
The recent progress in formation of two-dimensional (2D) GaN by a migration-enhanced encapsulated technique opens up new possibilities for group III-V 2D semiconductors with a band gap within the visible energy spectrum. Using…
In the field of quantum computation and communication there is a compelling need for quantum-coherent frequency conversion between microwave electronics and infra-red optics. A promising platform for this is an optomechanical crystal…
The heterogeneous integration of silicon with III-V materials provides a way to overcome silicon's limited optical properties toward a broad range of photonic applications. Hybrid modes are a promising way to make heterogeneous Si/III-V…
All-optical signal processing based on nonlinear optical devices is promising for ultrafast information processing in optical communication systems. Recent advances in two-dimensional (2D) layered materials with unique structures and…
Optical parametric amplification (OPA) represents a powerful solution to achieve broadband amplification in wavelength ranges beyond the scope of conventional gain media, for generating high-power optical pulses, optical microcombs,…
Phonons traveling in solid-state devices are emerging as a universal excitation that can couple to different physical systems through mechanical interaction. At microwave frequencies and in solid-state materials, phonons have a similar…
The ability to generate phase-stabilised trains of ultrafast laser pulses by mode-locking underpins photonics research in fields such as precision metrology and spectroscopy. However, the complexity of conventional mode-locked laser…