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相关论文: Doping Graphene via Organic Solid-Solid Wetting De…

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Two dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are promising for optical modulation, detection, and light emission since their material properties can be tuned on-demand via electrostatic doping. The…

Surface functionalization with organic electron donors (OEDs) is an effective doping strategy for two-dimensional (2D) materials, which can achieve doping levels beyond those possible with conventional electric field gating. While the…

Graphene on noble-metal nanostructures constitutes an attractive nanocomposite with possible applications in sensors or energy conversion. In this work we study the properties of hybrid graphene/gold nanoparticle structures by Raman…

介观与纳米尺度物理 · 物理学 2018-06-14 András Pálinkás , Péter Kun , Antal A. Koós , Zoltán Osváth

Since advanced Silicon-based device components are moderately chemically tunable, doped graphene has emerged as a promising candidate to replace this semiconducting material in flexible miniaturized electronic devices. Indeed, heteroatom…

材料科学 · 物理学 2022-10-27 Laura Caputo , Viet-Hung Nguyen , Jean-Christophe Charlier

Graphene monolayer is a material with zero band gap, because of which its applications in optoelectronics are limited. The question arises, can we modify the optoelectronic properties of graphene by doping it with other atoms? Synthesis of…

材料科学 · 物理学 2026-03-18 Samayita Das , Alok Shukla

Graphene is an excellent candidate for the next generation of electronic materials due to the strict two-dimensionality of its electronic structure as well as the extremely high carrier mobility. A prerequisite for the development of…

材料科学 · 物理学 2009-10-01 Isabella Gierz , Christian Riedl , Ulrich Starke , Christian R. Ast , Klaus Kern

The expected high performance of graphene-based electronics is often hindered by lack of adequate doping, which causes low carrier density and large sheet resistance. Many reported graphene doping schemes also suffer from instability or…

介观与纳米尺度物理 · 物理学 2020-09-29 Sam Vaziri , Victoria Chen , Lili Cai , Yue Jiang , Michelle Chen , Ryan Grady , Xiaolin Zheng , Eric Pop

We present a method to create and erase spatially resolved doping profiles in graphene-hexagonal boron nitride (hBN) heterostructures. The technique is based on photo-induced doping by a focused laser and does neither require masks nor…

Raman spectroscopy is a powerful tool for characterizing the local properties of graphene. Here, we introduce a method for evaluating unknown strain configurations and simultaneous doping. It relies on separating the effects of hydrostatic…

We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find…

介观与纳米尺度物理 · 物理学 2013-12-23 B. Sachs , L. Britnell , T. O. Wehling , A. Eckmann , R. Jalil , B. D. Belle , A. I. Lichtenstein , M. I. Katsnelson , K. S. Novoselov

Combining the electronic properties of graphene and molybdenum disulphide (MoS$_2$) monolayers in two-dimensional (2D) ultrathin hybrid nanocomposites have been synthesized experimentally to create excellent electronic, electrochemical,…

材料科学 · 物理学 2016-03-03 Wei Hu , Tian Wang , Jinlong Yang

Accurate and simple local strain assessment in graphene is one of the crucial tasks in device characterization. Raman spectroscopy is often used for that purpose through monitoring of the G and 2D modes. However, the shifts of those two…

材料科学 · 物理学 2018-04-27 Elena del Corro , Ladislav Kavan , Martin Kalbac , Otakar Frank

We have performed a density functional study of graphene adsorbed on Au(111) surface using both a local density approximation and a semiempirical van der Waals approach proposed by Grimme, known as the DFT-D2 method. Graphene physisorbed on…

材料科学 · 物理学 2015-05-27 J. Slawinska , P. Dabrowski , I. Zasada

When combined with graphene, hexagonal boron nitride (h-BN) is an ideal substrate and gate dielectric with which to build metalh-BN|graphene field-effect devices. We use first-principles density functional theory (DFT) calculations for…

材料科学 · 物理学 2011-11-11 Menno Bokdam , Petr A. Khomyakov , Geert Brocks , Zhicheng Zhong , Paul J. Kelly

In practical electronic applications, where doping is crucial to exploit large-area two-dimensional (2D) semiconductors, surface charge transfer doping (SCTD) has emerged as a promising strategy to tailor their electrical characteristics.…

We report on a scanning confocal Raman spectroscopy study investigating the strain-uniformity and the overall strain and doping of high-quality chemical vapour deposited (CVD) graphene-based heterostuctures on a large number of different…

Raman spectroscopy, a fast and nondestructive imaging method, can be used to monitor the doping level in graphene devices. We fabricated chemical vapor deposition (CVD) grown graphene on atomically flat hexagonal boron nitride (hBN) flakes…

材料科学 · 物理学 2013-12-09 Kanokporn Chattrakun , Shengqiang Huang , K. Watanabe , T. Taniguchi , A. Sandhu , B. J. LeRoy

Ab-initio calculations based on density functional theory (DFT) have been performed to study the optical properties of pure graphene and have been compared to that of individual boron (B), nitrogen (N) and BN co-doped graphene sheet. The…

介观与纳米尺度物理 · 物理学 2020-05-22 Pooja Rani , Girija S Dubey , V. K. Jindal

Avoiding charge density fluctuations and impurities in graphene is vital for high-quality graphene-based devices. Traditional characterization methods require device fabrication and electrical transport measurements, which are…

应用物理 · 物理学 2019-08-30 Zhuofa Chen , Nathan Ullberg , Mounika Vutukuru , David Barton , Anna K Swan

We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and…

材料科学 · 物理学 2015-06-05 O. Ochedowski , G. Begall , N. Scheuschner , M. El Kharrazi , J. Maultzsch , M. Schleberger