We present a joint theoretical and experimental investigation of charge doping and electronic potential landscapes in hybrid structures composed of graphene and semiconducting single layer MoS2. From first-principles simulations we find electron doping of graphene due to the presence of rhenium impurities in MoS2. Furthermore, we show that MoS2 edges give rise to charge reordering and a potential shift in graphene, which can be controlled through external gate voltages. The interplay of edge and impurity effects allows the use of the graphene-MoS2 hybrid as a photodetector. Spatially resolved photocurrent signals can be used to resolve potential gradients and local doping levels in the sample.
@article{arxiv.1304.2236,
title = {Doping Mechanisms in Graphene-MoS2 Hybrids},
author = {B. Sachs and L. Britnell and T. O. Wehling and A. Eckmann and R. Jalil and B. D. Belle and A. I. Lichtenstein and M. I. Katsnelson and K. S. Novoselov},
journal= {arXiv preprint arXiv:1304.2236},
year = {2013}
}