The ultimate surface exposure provided by graphene monolayer makes it the ideal sensor platform but also exposes its intrinsic properties to any environmental perturbations. In this work, we demonstrate that the charge carrier density of graphene exfoliated on a SiO2/Si substrate can be finely and reversibly tuned between electron and hole doping with visible photons. This photo-induced doping happens under moderate laser power conditions but is significantly affected by the substrate cleaning method. In particular, it is found to require hydrophilic substrates and to vanish in suspended graphene. These findings suggest that optically gated graphene devices operating with a sub-second time scale can be envisioned but also that Raman spectroscopy is not always as non-invasive as generally assumed.
@article{arxiv.1304.4418,
title = {Reversible optical doping of graphene},
author = {Antoine Tiberj and Miguel Rubio-Roy and Matthieu Paillet and Jean-Roch Huntzinger and Périne Landois and Mirko Mikolasek and Sylvie Contreras and Jean-Louis Sauvajol and Erik Dujardin and Ahmed-Azmi Zahab},
journal= {arXiv preprint arXiv:1304.4418},
year = {2013}
}