Graphene on Si(111)7x7

O. Ochedowski; G. Begall; N. Scheuschner; M. El Kharrazi; J. Maultzsch; M. Schleberger

doi:10.1088/0957-4484/23/40/405708

Graphene on Si(111)7x7

Materials Science 2015-06-05 v1

Authors: O. Ochedowski , G. Begall , N. Scheuschner , M. El Kharrazi , J. Maultzsch , M. Schleberger

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Abstract

We demonstrate that it is possible to mechanically exfoliate graphene under ultra high vacuum conditions on the atomically well defined surface of single crystalline silicon. The flakes are several hundred nanometers in lateral size and their optical contrast is very faint in agreement with calculated data. Single layer graphene is investigated by Raman mapping. The G and 2D peaks are shifted and narrowed compared to undoped graphene. With spatially resolved Kelvin probe measurements we show that this is due to p-type doping with hole densities of n_h \simeq 6x10^{12} cm^{-2}. The in vacuo preparation technique presented here should open up new possibilities to influence the properties of graphene by introducing adsorbates in a controlled way.

Keywords

epitaxial graphene graphene graphene plasmonics

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@article{arxiv.1206.0655,
  title  = {Graphene on Si(111)7x7},
  author = {O. Ochedowski and G. Begall and N. Scheuschner and M. El Kharrazi and J. Maultzsch and M. Schleberger},
  journal= {arXiv preprint arXiv:1206.0655},
  year   = {2015}
}

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8 pages, 7 figures

Graphene on Si(111)7x7

Abstract

Keywords

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