We report on a new method for graphene synthesis and assessment of the properties of the resulting large-area graphene layers. Graphene was produced by the high pressure - high temperature growth from the natural graphitic source by utilizing the molten Fe-Ni catalysts for dissolution of carbon. The resulting large-area graphene flakes were transferred to the silicon - silicon oxide substrates for the spectroscopic micro-Raman and scanning electron microscopy inspection. The analysis of the G peak, D, T+D and 2D bands in the Raman spectra under the 488-nm laser excitation indicate that the high pressure - high temperature technique is capable of producing the high-quality large-area single-layer graphene with a low defect density. The proposed method may lead to a more reliable graphene synthesis and facilitate its purification and chemical doping.
@article{arxiv.0802.4058,
title = {Graphene Synthesis via the High Pressure - High Temperature Growth Process},
author = {F. Parvizi and D. Teweldebrhan and S. Ghosh and I. Calizo and A. A. Balandin and H. Zhu and R. Abbaschian},
journal= {arXiv preprint arXiv:0802.4058},
year = {2008}
}