Graphene as a p-type metal for ultimate miniaturization
Abstract
We report macroscopic sheets of highly conductive bilayer graphene with exceptionally high hole concentrations of ~ and unprecedented sheet resistances of 20-25 {\Omega} per square over macroscopic scales, and obtained in-situ over a thin cushion of molecular oxygen on a silicon substrate. The electric and electronic properties of this specific configuration remain stable upon thermal anneals and months of exposure to air. We further report a complementary ab-initio study, predicting an enhancement of graphene adhesion energy of up to a factor 20, also supported by experimental fracture tests. Our results show that the remarkable properties of graphene can be realized in a reliable fashion using a high-throughput process. In addition to providing exceptional material properties, the growth process we employed is scalable to large areas so that the outstanding conduction properties of graphene can be harnessed in devices fabricated via conventional semiconductor manufacturing processes. We anticipate that the approach will provide the necessary scalability and reliability for future developments in the graphene nanoscience and technology fields, especially in areas where further miniaturization is hampered by size effects and electrical reliability of classical conductors.
Cite
@article{arxiv.1503.06253,
title = {Graphene as a p-type metal for ultimate miniaturization},
author = {Francesca Iacopi and Tim Gould and John J. Boeckl and Neeraj Mishra and Dayle Goding and Aiswarya Pradeepkumar and Benjamin V. Cunning and Barry Wood and Ryan E. Brock and Reinhold H. Dauskardt and Sima Dimitrijev},
journal= {arXiv preprint arXiv:1503.06253},
year = {2016}
}
Comments
This paper has been withdrawn due to new evidence of intrinsic interfacial shorting of the SiC to the silicon substrate after graphitization anneal, full details in A.Pradeepkumar, N.Mishra, A.R.Kermany, J.J.Boeckl, J.Hellerstedt, M.S.Fuhrer, F.Iacopi, "Catastrophic degradation of the interface of epitaxial silicon carbide on silicon at high temperatures", ApplPhysLett 109, 011604, 2016