The modification of single layer graphene due to intense, picoseconds near-infrared laser pulses is investigated. We monitor the stable changes introduced to graphene upon photoexcitation using Raman spectroscopy. We find that photoexcitation leads to both a local increase in hole doping and a reduction in compressive strain. Possible explanations for these effects, due to photo-induced oxygenation and photo-induced buckling of the graphene, are discussed.
@article{arxiv.1310.0970,
title = {Photo-induced doping and strain in exfoliated graphene},
author = {E. Alexeev and J. Moger and E. Hendry},
journal= {arXiv preprint arXiv:1310.0970},
year = {2015}
}
Comments
4 pages, 3 figures. The following article has been accepted by Applied Physics Letters. After it is published, it will be found at http://apl.aip.org/