English

Phonon renormalisation in doped bilayer graphene

Mesoscale and Nanoscale Physics 2015-05-13 v1

Abstract

We report phonon renormalisation in bilayer graphene as a function of doping. The Raman G peak stiffens and sharpens for both electron and hole doping, as a result of the non-adiabatic Kohn anomaly at the Γ\Gamma point. The bilayer has two conduction and valence subbands, with splitting dependent on the interlayer coupling. This results in a change of slope in the variation of G peak position with doping, which allows a direct measurement of the interlayer coupling strength.

Keywords

Cite

@article{arxiv.0807.1631,
  title  = {Phonon renormalisation in doped bilayer graphene},
  author = {A. Das and B. Chakraborty and S. Piscanec and S. Pisana and A. K. Sood and A. C. Ferrari},
  journal= {arXiv preprint arXiv:0807.1631},
  year   = {2015}
}

Comments

5 figures

R2 v1 2026-06-21T10:59:14.773Z