相关论文: Minority carrier diffusion lengths and mobilities …
Transport measurements made on films of thallium-oxide (n-type semiconductor) are presented and discussed. The focus in this work is on the strongly-localized regime where charge transport is by variable-range-hopping. It is demonstrated…
Despite the highly porous nature with significantly large surface area, metal organic frameworks (MOFs) can be hardly used in electronic, and optoelectronic devices due to their extremely poor electrical conductivity. Therefore, the study…
Aims. We aim to understand the unexpected presence of mm-wave molecular absorption at -200 \kms $< {\rm v} < -140$ \kms\ in a direction that is well away from regions of the Galactic bulge where CO emission at such velocities is prominent.…
We study the effect of the impurity density on lifetimes and relaxation lengths of electron spins in the presence of a static electric field in a n-type GaAs bulk. The transport of electrons and the spin dynamics are simulated by using a…
The standard model of Mn doping in GaAs is subjected to a coherent potential approximation (CPA) treatment. Transport coefficients are evaluated within the linear response Kubo formalism. Both normal (NHE) and anomalous contributions (AHE)…
The development of energy-efficient spin-based hybrid devices that can perform functions such as logic, communication, and storage requires the ability to control and transport highly polarized spin currents over long distances in…
We report on simple experiment on temperature-dependent Hall effect measurements in GaMnAs single crystalline samples with Mn composition estimated at 0.05-0.3 at.% which is slightly below the onset of ferromagnetism. Impurity band…
As a tool for studying the structure of nuclei far off stability the technique of gamma-ray spectroscopy after low-energy single-nucleon transfer reactions with radioactive nuclear beams in inverse kinematics was investigated. Modules of…
We demonstrate a method of making a very shallow, gateable, undoped 2-dimensional electron gas. We have developed a method of making very low resistivity contacts to these structures and systematically studied the evolution of the mobility…
The experimental data in the literature for the hcp phase of the Mg-Al-Zn ternary system have been critically reviewed. Based on the concentration profiles from the literature, the diffusion coefficients have been re-extracted using the…
Ultrawide bandgap heterojunction p-n diodes with polarization-induced AlGaN p-type layers are demonstrated using plasma-assisted molecular beam epitaxy on bulk AlN substrates. Current-voltage characteristics show a turn on voltage of…
Many optoelectronic properties have been reported for lead halide perovskite polycrystalline films. However, ambiguities in the evaluation of these properties remain, especially for long-range lateral charge transport, where ionic…
The applications of optical links in collider experiments provide the advantage of high-speed data transmission with low mass fibers over distances of a few hundred meters. Ge-doped multi-mode fibers are evaluated for radiation tolerance in…
We apply the stochastic model of iron transport developed by Rebusco et. al. (2005) to the Centaurus cluster. Using this model, we find that an effective diffusion coefficient D in the range 2x10^28 - 4x10^28 cm^2 s^-1 can approximately…
Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm…
We have developed and applied a mobility edge model that takes into account drift and diffusion currents to characterize the space charge limited current in organic semiconductors. The numerical solution of the drift-diffusion equation…
We use optical transient-grating spectroscopy to measure spin diffusion of optically oriented electrons in bulk, semi-insulating GaAs(100). Trapping and recombination do not quickly deplete the photoexcited population. The spin diffusion…
The carrier spin coherence in a p-doped GaAs/(Al,Ga)As quantum well with a diluted hole gas has been studied by picosecond pump-probe Kerr rotation with an in-plane magnetic field. For resonant optical excitation of the positively charged…
Electrical spin transport and accumulation have been measured in highly Si doped Al0.3Ga0.7As utilizing a lateral spin transport device. Persistent photoconductivity allows for the tuning of the effective carrier density of the channel…
(La and Ga)-doped tin monoxide (stannous oxide, tin (II) oxide, SnO) thin films were grown by plasma-assisted and suboxide molecular beam epitaxy with dopant concentrations ranging from $\approx5\times10^{18}$cm$^{-3}$ to…