相关论文: Minority carrier diffusion lengths and mobilities …
The hot-wall metal-organic chemical vapor deposition (MOCVD), previously shown to enable superior III-nitride material quality and high performance devices, has been explored for Mg doping of GaN. We have investigated the Mg incorporation…
We use the IllustrisTNG (TNG) cosmological, hydrodynamical simulations of galaxy formation to measure the velocity dispersion profiles of dark matter and star particles in Milky Way-mass, galaxy group, and cluster-scale dark matter halos.…
Moisture-capturing hydrogels have emerged as attractive sorbent materials capable of converting ambient humidity into liquid water. Recent works have demonstrated exceptional water capture capabilities of hydrogels, while simultaneously,…
he frequency dependence in the mid IR from 900 to 1100 cm$^{-1}$ and far IR at 84 cm$^{-1}$ and temperature dependence from 35 to 330 K of the normal state Hall transport is reported in single crystal, optimally doped…
We report the transport properties of a low disorder two-dimensional hole system (2DHS) in the GaAs/AlGaAs heterostructure, which has an unprecedentedly high peak mobility of $7\times 10^5cm^2/Vs$, with hole density of $4.8\times 10^9…
We report on a comprehensive theoretical and experimental investigation of thermal conductivity in indium-tin-oxide (ITO) thin films with various Ga concentrations (0-30 at. %) deposited by spray pyrolysis technique. X-Ray diffraction (XRD)…
We have determined the localization length \xi and the impurity dielectric susceptibility \chi_{\rm imp} as a function of Ga acceptor concentrations (N) in nominally uncompensated ^{70}Ge:Ga just below the critical concentration (N_c) for…
The dynamics of the movement of gas is discussed for two-chambered polarized He-3 target cells of the sort that have been used successfully for many electron scattering experiments. A detailed analysis is presented showing that diffusion is…
We report on the first demonstration of p-type doping in large area few-layer films of (0001)-oriented chemical vapor deposited (CVD) MoS2. Niobium was found to act as an efficient acceptor up to relatively high density in MoS2 films. For a…
Drift velocity and longitudinal diffusion measurements are reported for a Negative Ion TPC (NITPC) operating with Helium + carbon disulfide gas mixtures at total pressures from 160 to 700 torr. Longitudinal diffusion at the thermal-limit…
The transport of holes through p-doped wurtzite bulk GaN and AlGaN is poor so transport of holes through GaN/AlGaN superlattices has been proposed and investigated theoretically and experimentally with experimental results showing poor…
We have prepared a number of GaAs structures delta-doped by Sn using the well-known molecular beam epitaxy growth technique. The samples obtained for a wide range of Sn doping densities were characterised by magnetotransport experiments at…
The determination of the carrier diffusion length of semiconductors such as GaN and GaAs by cathodoluminescence imaging requires accurate knowledge about the spatial distribution of generated carriers. To obtain the lateral distribution of…
III-V colloidal quantum dots are widely studied for their applications as detectors and emitters from visible to short-wave infrared. They might also be used in the mid-infrared if they can be stably n-doped to access their intraband…
Reported electron and hole mobilities, and their saturation velocities, in diamond span orders of magnitude across the literature. We attribute this dispersion primarily to (i) the electric-field window probed in TCT measurements, (ii) the…
An analytical and numerical study is presented of transmission of radiation through a multi-mode waveguide containing a random medium with a complex dielectric constant $\epsilon= \epsilon'+i\epsilon''$. Depending on the sign of…
Hydrogen column densities inferred from X-ray absorption are typically 5 - 30 times larger than the neutral atomic hydrogen column densities derived from 21cm HI absorption toward radio-loud active galactic nuclei. Some part of the…
The photoconductivity of GaAs structures delta-doped by Sn has been investigated for wavelengths lambda= 650-1200 nm in the temperature interval T= 4.2-300 K. The electron densities and mobilities, before and after illumination, have been…
Low-temperature transport experiments on a p-type GaAs quantum dot capacitively coupled to a quantum point contact are presented. The time-averaged as well as time-resolved detection of charging events of the dot are demonstrated and they…
We report the application of femtosecond four-wave mixing (FWM) to the study of carrier transport in solution-processed CH3NH3PbI3. The diffusion coefficient was extracted through direct detection of the lateral diffusion of carriers…