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Ability to understand and model the performance limits of nanowire transistors is the key to design of next generation devices. Here, we report studies on high-mobility junction-less gate-all-around nanowire field effect transistor with…

介观与纳米尺度物理 · 物理学 2015-06-25 Aniruddha Konar , John Mathew , Kaushik. Nayak , Mohit. Bajaj , Rajan K. Pandey , Sajal Dhara , K. V. R. M. Murali , Mandar Deshmukh

In order to provide the best possible performance, modern infrared photodetector designs necessitate extremely precise modeling of the superlattice absorber region. We advance the Rode's method for the Boltzmann transport equation in…

材料科学 · 物理学 2023-07-05 Rohit Kumar , Anup Kumar Mandia , Anuja Singh , Bhaskaran Muralidharan

We present a study of the temperature and density dependence of the resistivity of an extremely high quality two-dimensional hole system grown on the (100) surface of GaAs. For high densities in the metallic regime ($p\agt 4 \times 10^{9}$…

介观与纳米尺度物理 · 物理学 2009-11-13 M. J. Manfra , E. H. Hwang , S. Das Sarma , L. N. Pfeiffer , K. W. West , A. M. Sergent

We present a detailed study of the charge transport, optical reflectivity, and thermal transport properties of n-type PbSe crystals. A strong scattering, mobility-limiting mechanism was revealed to be at play at temperatures above 500 K.…

We develop a two-carrier Hall effect model fitting algorithm to analyze temperature-dependent magnetotransport measurements of a high-density ($\sim4\times10^{13}$ cm$^2$/Vs) polarization-induced two-dimensional hole gas (2DHG) in a GaN/AlN…

应用物理 · 物理学 2025-01-27 Joseph E. Dill , Chuan F. C. Chang , Debdeep Jena , Huili Grace Xing

We discuss the identification and kinematics of intrinsic narrow-line absorbers in three QSOs. The line-of-sight ejection velocities in the confirmed intrinsic systems range from 1500 to 51,000 km/s. The ratio of ejection velocity to line…

天体物理学 · 物理学 2007-05-23 F. Hamann , T. Barlow , R. D. Cohen , V. Junkkarinen , E. M. Burbidge

We report on the effect of electron and proton irradiation on effective minority carrier lifetimes (${\tau}_{eff}$) in p-type Ge wafers. Minority carrier lifetimes are assessed using the microwave-detected photoconductance decay…

应用物理 · 物理学 2020-05-18 C. Weiss , S. Park , J. Lefèvre , B. Boizot , C. Mohr , O. Cavani , S. Picard , R. Kurstjens , T. Niewelt , S. Janz

Finding and understanding non-Fermi liquid transport behaviors are at the core of condensed matter physics. Most of the existing studies were devoted to the monolayer Hubbard model, which is the simplest model that captures essential…

强关联电子 · 物理学 2024-02-27 Yin Shi , Jonathan Schirmer , Long-Qing Chen

For nitride-based InGaN and AlGaN quantum well (QW) LEDs, the potential fluctuations caused by natural alloy disorders limit the lateral intra-QW carrier diffusion length and current spreading. The diffusion length mainly impacts the…

应用物理 · 物理学 2021-09-01 Huan-Ting Shen , Claude Weisbuch , James S. Speck , Yuh-Renn Wu

We study transient dynamics of hole carriers injected at a certain time into a Mott insulator with antiferromagnetic long range order. This is termed ``dynamical hole doping" as contrast with chemical hole doping. Theoretical framework for…

强关联电子 · 物理学 2015-06-18 Eiki Iyoda , Sumio Ishihara

In case of a of the heterostructure n-GaAs/AlGaAs with sheet density $n=2 \times 10^{11}$cm$^{-2}$ and mobility $\mu \approx 2 \times 10^6$ cm$^2$/V$\cdot$s with integer and fractional quantum Hall effect (IQHE and FQHE, respectively) we…

介观与纳米尺度物理 · 物理学 2015-03-19 I. L. Drichko , I. Yu. Smirnov , A. V. Suslov , D. R. Leadley

PbSe is a low-gap semiconductor with excellent infrared photo-detection properties. Here we report our high magnetic field and low temperature electrical properties measurement performed on a moderately doped PbSe single crystals with…

介观与纳米尺度物理 · 物理学 2015-12-18 Naween Anand , C. Martin , Genda Gu , David B. Tanner

At low energy scales charge transport in the insulating Si:P is dominated by activated hopping between the localized donor electron states. Thus, theoretical models for a disordered system with electron-electron interaction are appropriate…

无序系统与神经网络 · 物理学 2008-03-03 Elvira Ritz , Martin Dressel

The two-dimensional electron gas residing in shallow InAs quantum wells coupled to epitaxial aluminum is a widely utilized platform for exploration of topological superconductivity. Strong spin-orbit coupling, large effective $g$-factor,…

介观与纳米尺度物理 · 物理学 2024-12-17 Teng Zhang , Tyler Lindemann , Geoffrey C. Gardner , Sergei Gronin , Tailung Wu , Michael J. Manfra

We find that the spin-charge motion in a strongly confined two-dimensional hole gas (2DHG) supports a propagating mode of cubic dispersion apart from the diffusive mode due to momentum scattering. Propagating modes seem to be a generic…

介观与纳米尺度物理 · 物理学 2009-11-11 Taylor L. Hughes , B. Andrei Bernevig , Yaroslaw B. Bazaliy

(Abridged) We present new, intermediate resolution spectra (~4A) of the compact radio source PKS 1345+12. Our spectra clearly show extended line emission (~20kpc) consistent with the asymmetric halo of diffuse emission observed in optical…

天体物理学 · 物理学 2009-11-07 J. Holt , C. N. Tadhunter , R. Morganti

We present a neutral hydrogen-selected absorption-line survey of gas with HI column densities 15<log N(HI)<19 at z<1 using the Cosmic Origins Spectrograph on the Hubble Space Telescope. Our main aim is to determine the metallicity…

Active Galactic Nuclei often show evidence of photoionized outflows. A major uncertainty in models for these outflows is the distance ($R$) to the gas from the central black hole. In this paper we use the HST/COS data from a massive…

We present molecular beam epitaxial grown single- and double-side $\delta$-doped InAlSb/InSb quantum wells with varying distances down to 50 nm to the surface on GaSb metamorphic buffers. We analyze the surface morphology as well as the…

材料科学 · 物理学 2018-05-15 Ch. A. Lehner , T. Tschirky , T. Ihn , W. Dietsche , J. Keller , S. Fält , W. Wegscheider

In this Letter, four-point magnetotransport of high mobility InGaAs/InP heterointerfaces is measured from 1.6 K to 300 K and from 0 to 15 T, and an analysis is shown whereby the mobility and density of the two-dimensional (2D) accumulation…

介观与纳米尺度物理 · 物理学 2011-01-26 Yang Tang , Chuanle Zhou , M. Grayson