相关论文: Minority carrier diffusion lengths and mobilities …
We have observed a metal-insulator transition in an ultra-low density two dimensional hole gas formed in a high quality GaAs-AlGaAs heterostructure at B=0. At the highest carrier density studied ($p_{s}=2.2x10^{10} cm^{-2}, r_{s}=16$) the…
Fast radio bursts offer the opportunity to place new constraints on the mass and density profile of hot and ionized gas in galactic haloes. We test here the X-ray emission and dispersion measure predicted by different gas profiles for the…
Efficiency droop effect under high injection in GaN-based light emitting diodes (LEDs) strongly depends on wavelength, which is still not well understood. In this paper, through differential carrier lifetime measurements on commercialized…
We investigated transport, magnetotransport, and broadband optical properties of the half-Heusler compound YbPtBi. Hall measurements evidence two types of charge carriers: highly mobile electrons with a temperature-dependent concentration…
A review of electronic properties of insulating-, boron- and phosphorus-doped diamond is given. The main goal is, to show data in a wider context, to reveal trends and limitations with respect to carrier mobilities, conductivities, p- and…
The nonohmic conductivity of 2D hole gas (2DHG) in single $GaAsIn_{0.2}Ga_{0.8}AsGaAs$ quantum well structures within the temperature range of 1.4 - 4.2K, the carrier's densities $p=(1.5-8)\cdot10^{15}m^{-2}$ and a wide range of…
The conductivity of extremely high mobility dilute two-dimensional holes in GaAs changes linearly with temperature in the insulating side of the metal-insulator transition. Hopping conduction, characterized by an exponentially decreasing…
The combination of dispersion measures of pulsars, distances from the model of Cordes and Lazio (2002) and emission measures from the WHAM survey enabled a statistical study of electron densities and filling factors of the diffuse ionized…
Recombination of minority carriers in heavily doped n-InP wafers has been investigated using spectral and time-resolved photoluminescence at different temperatures. Studies of the transmitted luminescence were enabled by the partial…
Shallow GaAs/InGaAs/GaAs quantum well structures with and without a three monolayer thick AlAs central barrier have been investigated for different well widths and Si doping levels. The transport parameters are determined by resistivity…
Understanding the origin of hot carrier relaxation in nanowires (NWs) with one-dimensional (1D) geometry is significant for designing efficient hot carrier solar cells with such nanostructures. Here, we study the influence of Auger heating…
We investigate temperature dependent transport properties of two-dimensional p-GaAs systems taking into account both hole-phonon and hole-impurity scattering effects. By analyzing the hole mobility data of p-GaAs in the temperature range 10…
We report on the transport measurements of two-dimensional holes in GaAs field effect transistors with record low densities down to 7*10^8 cm^{-2}. Remarkably, such a dilute system (with Fermi wavelength approaching 1 micrometer) exhibits a…
We report a study of magneto-optical properties in the mid-infrared region of a series of La$_{2-x}$Sr$_x$CuO$_4$ samples with hole doping level ranging from severely underdoped ($x=0.03$)to optimally doped ($x=0.15$). The Faraday rotation…
We study electrical and optical conductivities of hole gas in $p$-doped bulk III-V semiconductors described by the Luttinger Hamiltonian. We provide exact analytical expressions of the Drude conductivity, inverse relaxation time for various…
Dark matter (DM) clustering at the present epoch is investigated from a fractal viewpoint in order to determine the scale where the self-similar scaling property of the DM halo distribution transits to homogeneity. Methods based on…
A holistic computational analysis is developed to calculate the quantum efficiency of InAs/GaSb superlattice-based photodetectors. Starting with the electronic band characteristics computed by taking the InSb/GaAs at the interface using the…
The ambipolar carrier diffusion in bulk GaAs is studied by using an ultrafast pump-probe technique with a high spatial resolution. Carriers with a point-like spatial profile are excited by a tightly focused pump laser pulse. The…
Photon transport through a diffusing slab can be described by the radiative transfer equation (RTE). When the slab is highly scattering and weakly absorbing, the RTE simplifies to the diffusion equation. In this paper, an inverse diffusion…
For applications to sensor design, the product nxmu of the electron density n and the mobility mu is a key parameter to be optimized for enhanced device sensitivity. We model the carrier mobility in a two dimensional electron gas (2DEG)…