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Topological insulators (TIs) are emergent materials with unique band structure, which allow the study of quantum effect in solids, as well as contribute to high performance quantum devices. To achieve the better performance of TI, here we…

Topological insulators are novel quantum materials with metallic surface transport, but insulating bulk behavior. Often, topological insulators are dominated by bulk contributions due to defect induced bulk carriers, making it difficult to…

We show that by Ca-doping the Bi2Se3 topological insulator, the Fermi level can be fine tuned to fall inside the band gap and therefore suppress the bulk conductivity. Non-metallic Bi2Se3 crystals are obtained. On the other hand, the Bi2Se3…

强关联电子 · 物理学 2015-05-19 Y. S. Hor , J. G. Checkelsky , D. Qu , N. P. Ong , R. J. Cava

Layered narrow band gap semiconductor Bi2Se3 is composed of heavy elements with strong spin-orbital coupling (SOC), which has been identified both as a good candidate of thermoelectric material of high thermoelectric figure-of-merit (ZT)…

材料科学 · 物理学 2018-04-04 G. J. Shu , S. C. Liou , S. K. Karna , R. Sankar , M. Hayashi , F. C. Chou

We theoretically investigate the possibility of establishing ferromagnetism in the topological insulator Bi2Se3 via magnetic doping of 3d transition metal elements. The formation energies, charge states, band structures, and magnetic…

材料科学 · 物理学 2013-01-08 Jian-Min Zhang , Wenguang Zhu , Ying Zhang , Di Xiao , Yugui Yao

Angle-resolved photoelectron spectroscopy is used for a detailed study of the electronic structure of the topological insulator Bi2Se3. Nominally stoichiometric and calcium-doped samples were investigated. The pristine surface shows the…

The archetypical 3D topological insulators Bi2Se3, Bi2Te3 and Sb2Te3 commonly exhibit high bulk conductivities, hindering the characterization of the surface state charge transport. The optimally doped topological insulators Bi2Te2Se and…

Topological insulators are a new class of materials that support topologically protected electronic surface states. Potential applications of the surface states in low dissipation electronic devices have motivated efforts to create…

介观与纳米尺度物理 · 物理学 2012-10-15 L. D. Alegria , J. R. Petta

The Cu-doped topological insulator Bi$_2$Se$_3$ has recently been found to undergo a superconducting transition upon cooling, raising the possibilities that it is the first known "topological superconductor" or realizes a novel non-Abelian…

超导电性 · 物理学 2009-12-18 L. Wray , S. Xu , J. Xiong , Y. Xia , D. Qian , H. Lin , A. Bansil , Y. Hor , R. J. Cava , M. Z. Hasan

Transport due to spin-helical massless Dirac fermion surface state is of paramount importance to realize various new physical phenomena in topological insulators, ranging from quantum anomalous Hall effect to Majorana fermions. However, one…

介观与纳米尺度物理 · 物理学 2014-02-13 Luis A. Jauregui , Michael T. Pettes , Leonid P. Rokhinson , Li Shi , Yong P. Chen

Graphene-based vertical heterostructures, particularly stacks incorporated with other layered materials, are promising for nanoelectronics. The stacking of two model Dirac materials, graphene and topological insulator, can considerably…

介观与纳米尺度物理 · 物理学 2016-03-24 Liang Zhang , Yuan Yan , Han-Chun Wu , Dapeng Yu , Zhi-Min Liao

Using high-resolution angle-resolved photoemission spectroscopy and scanning tunneling microscopy/spectroscopy, the atomic and low energy electronic structure of the Sr-doped superconducting topological insulators (SrxBi2Se3) was studied.…

We have studied the energy dispersion of the Dirac bands of the topological insulator Bi2Se3 at large parallel momenta using a setup for laser-based time-resolved momentum microscopy with 6 eV probe-photons. Using this setup, we can probe…

Since the discovery of topological insulators (TIs)1,2, the peculiar nature of their chiral surface states has been experimentally demonstrated both in bulk and in film materials with open boundaries3,4. Closed boundary on a TI surface may…

介观与纳米尺度物理 · 物理学 2014-04-21 Mu Chen , Zhen-Guo Fu , Jun-Ping Peng , Fawei Zheng , Hui-Min Zhang , Xiao Feng , Cui-Zu Chang , Ke He , Lili Wang , Ping Zhang , Xucun Ma , Qi-Kun Xue

The bulk of topological insulators is relatively unexplored due to excess contribution of conduction from native defects. Here we investigate the bulk conduction in a Bi2Te3 crystal having reduced defect induced conduction. Our results…

材料科学 · 物理学 2019-05-22 Archana Lakhani , Devendra Kumar

3D topological insulators are a new state of quantum matter which exhibits both a bulk band structure with an insulating energy gap as well as metallic spin-polarized Dirac fermion states when interfaced with a topologically trivial…

The three dimensional (3D) topological insulators are predicted to exhibit a 3D Dirac semimetal state in critical regime of topological to trivial phase transition. Here we demonstrate the first experimental evidence of 3D Dirac semimetal…

介观与纳米尺度物理 · 物理学 2016-01-11 Devendra Kumar , Archana Lakhani

Bismuth selenide (Bi2Se3) is a prototypical three-dimensional topological insulator whose Dirac surface states have been extensively studied theoretically and experimentally. Surprisingly little, however, is known about the energetics and…

In Bi$_2$Te$_2$Se, the period of quantum oscillations arising from surface Dirac fermions can be increased 6-fold using ionic liquid gating. At large gate voltages, the Fermi energy reaches the $N$ = 1 Landau level in a 14-Tesla field. This…

介观与纳米尺度物理 · 物理学 2013-07-24 Jun Xiong , Yuehaw Khoo , Shuang Jia , R. J. Cava , N. P. Ong

We have investigated the transport properties of topological insulator Bi2Se3 thin films grown using magnetron sputtering with an emphasis on understanding the behavior as a function of thickness. We show that thickness has a strong…

材料科学 · 物理学 2018-03-20 Yub Raj Sapkota , Dipanjan Mazumdar