中文
相关论文

相关论文: Morphological characterization of Ge ion implanted…

200 篇论文

The damage growth and surface modifications in Si(100), induced by 25 keV Si$_5^-$ cluster ions, as a function of fluence, $\phi$, has been studied using atomic force microscopy (AFM) and channeling Rutherford backscattering spectrometry…

材料科学 · 物理学 2009-11-13 H. P. Lenka , B. Joseph , P. K. Kuiri , G. Sahu , P. Mishra , D. Ghose , D. P. Mahapatra

Structural and ferromagnetic properties in Mn implanted, p-type Si were investigated. High resolution structural analysis techniques like synchrotron X-ray diffraction revealed the formation of MnSi1.7 nanoparticles already in the as…

An efficient method of exploring the effects of anisotropy in the fractal properties of 2D surfaces and images is proposed. It can be viewed as a direction-sensitive generalization of the multifractal detrended fluctuation analysis (MFDFA)…

应用物理 · 物理学 2024-10-14 Rafał Rak , Stanisław Drożdż , Jarosław Kwapień , Paweł Oświęcimka

Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix,…

Advancements in 2D magnetic materials highlight their potential in semiconductors, magnetism, and spintronics, particularly in tuning magnetic properties for spintronic applications. This study investigates the impact of low-energy (30 KeV)…

应用物理 · 物理学 2025-08-08 Gurupada Ghorai , Kalyan Ghosh , Pratap K. Sahoo

Systematic studies of the gradual fabrication by means of carbon ion-implantation of high-quality 6H-SiC layers on silicon surfaces have been carried out. The fluence of carbon ions varied from 5*10^15 cm-2 to 10^17 cm-2. Results of…

The morphology evolution of Si (100) surfaces under 1200 eV Ar+ ion bombardment at normal incidence with and without metal incorporation is presented. The formation of nanodot patterns is observed only when the stationary Fe concentration…

材料科学 · 物理学 2015-05-18 Jing Zhou , Stefan Facsko , Ming Lu , Wolfhard Moeller

Self-ion implantation amorphization is an established approach to study the structure and properties of amorphous silicon (a-Si). Fluctuation Electron Microscopy (FEM) has consistently observed Medium-Range Order (MRO) in this system that…

材料科学 · 物理学 2025-07-28 J. M. Gibson , Robe Elliman , T. Susi , C. Mangler

W-O deposits with complex morphologies and significant He contents will growth on the surface of plasma facing components exposed to He discharges. To mimic the re/co-deposition process, W-O-He coatings were produced by implanting He+ ions…

应用物理 · 物理学 2018-12-18 R. Mateus , D. Dellasega , M. Passoni , Z. Siketić , I. Bogdanović Radović , A. Hakola , E. Alves

We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine…

材料科学 · 物理学 2009-11-10 D. K. Goswami , K. Bhattacharjee , B. N. Dev

Using silicon MOSFETs with thin (5nm) thermally grown SiO2 gate dielectrics, we characterize the density of electrically active traps at low-temperature after 16keV phosphorus ion-implantation through the oxide. We find that, after rapid…

材料科学 · 物理学 2007-05-23 D. R. McCamey , M. Francis , J. C. McCallum , A. R. Hamilton , A. D. Greentree , R. G. Clark

Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a…

材料科学 · 物理学 2015-07-15 B. N. Dev , N. Banu , J. Fassbender , J. Grenzer , N. Schell , L. Bischoff , R. Groetzschel , J. McCord

The two-dimensional multifractal detrended fluctuation analysis is applied to reveal the multifractal properties of the fracture surfaces of foamed polypropylene/polyethylene blends at different temperatures. Nice power-law scaling…

材料科学 · 物理学 2009-01-03 Chuang Liu , Xiu-Lei Jiang , Tao Liu , Ling Zhao , Wei-Xing Zhou , Wei-Kang Yuan

We report measurements of the diffusion rate of isolated ion-implanted $^{8}$Li$^{+}$ within $\sim$120 nm of the surface of oriented single-crystal rutile TiO$_2$ using a radiotracer technique. The $\alpha$-particles from the $^{8}$Li decay…

Silicon nanocrystals are produced using a two-stage gold ion implantation technique. First stage implantation using low energy ions leads to the formation of an amorphous Si (a-Si) layer. A subsequent high energy Au irradiation in the…

介观与纳米尺度物理 · 物理学 2014-03-26 Gayatri Sahu , Rajesh Kumar , D. P. Mahapatra

We report on structural, magnetic and electronic properties of Co-implanted TiO2 rutile single crystals for different implantation doses. Strong ferromagnetism at room temperature and above is observed in TiO2 rutile plates after cobalt ion…

Using ab-initio calculations within the framework of Density Functional Theory (DFT), atomic structures and electronic properties of MoS2/HfO2 interface are investigated. The impact of interfacial oxygen concentration on the MoS2/HfO2…

材料科学 · 物理学 2014-02-10 Santosh KC , Roberto C. Longo , Robert M. Wallace , Kyeongjae Cho

A modification of the surface structure of the hybrid coating TiN/Al_{2}O_{3} with a low-energy high-current electron beam (NCEB) is performed. The surface roughness is considered as a function of beam current. Surfaces of the obtained…

材料科学 · 物理学 2013-10-07 A. D. Pogrebnjak , V. N. Borisyuk , A. A. Bagdasaryan

10 nm and 50 nm Co$_{2}$FeAl (CFA) thin films have been deposited on MgO(001) and Si(001) substrates by magnetron sputtering and annealed at different temperatures. X-rays diffraction revealed polycrystalline or epitaxial growth (according…

材料科学 · 物理学 2014-07-30 M. Belmeguenai , H. Tuzcuoglu , M. S. Gabor , T. Petrisor , C. Tuisan , F. Zighem , S. M. Chérif , P. Moch

Neutron diffraction measurements have been carried out to investigate the magnetic form factor of the parent SrFe2As2 system of the iron-based superconductors. The general feature is that the form factor is approximately isotropic in wave…

超导电性 · 物理学 2010-04-20 W. Ratcliff , P. A. Kienzle , Jeffrey W. Lynn , Shiliang Li , Pengcheng Dai , G. F. Chen , N. L. Wang
‹ 上一页 1 2 3 10 下一页 ›