Fe implanted ferromagnetic ZnO
材料科学
2007-05-23 v1
摘要
Room-temperature ferromagnetism has been induced within ZnO single crystals by implant-doping with Fe ions. For an implantation temperature of 620 K and an ion fluence of 4x10^16 cm^-2, very tiny Fe particles, formed inside the host matrix, are responsible for the ferromagnetic properties. They were identified using synchrotron X-ray diffraction and Moessbauer spectroscopy. On the other hand, Fe ions implanted at a temperature of 253 K and an ion fluence of 4x10^15 cm^-2 are incorporated into the host matrix and develop a room temperature diluted magnetic semiconductor (DMS).
引用
@article{arxiv.cond-mat/0512267,
title = {Fe implanted ferromagnetic ZnO},
author = {K. Potzger and Shengqiang Zhou and H. Reuther and A. Muecklich and F. Eichhorn and N. Schell and W. Skorupa and M. Helm and J. Fassbender and T. Herrmannsdoerfer and T. P. Papageorgiou},
journal= {arXiv preprint arXiv:cond-mat/0512267},
year = {2007}
}
备注
13 pages, 2 figs, to be published in Appl. Phys. Lett