相关论文: Fractal analysis of BaF2 thin films deposited on d…
In this article, fractal concepts were used to explore the thermally evaporated potassium bromide thin films of different thicknesses 200, 300, and 500 nm respectively; grown on aluminium substrates at room temperature. The self-affine or…
Al2O3 thin films have been deposited at substrate temperatures between 500{\deg}C to 600{\deg}C by reactive magnetron sputtering using an additional arbitrary substrate bias to tailor the energy distribution of the incident ions. The films…
Oblique angle deposited oxide thin films have opened up new dimensions in fabricating optical interference devices with tailored refractive index profile along thickness by tuning its microstructure by varying angle of deposition.…
We demonstrate the growth of Co-doped BaFe2As2 (Ba-122) thin films on AEF2 (001) (AE: Ca, Sr, Ba) single crystal substrates using pulsed laser deposition. All films are grown epitaxially despite of a large misfit of -10.6% for BaF2…
Specific heat of polycrystalline BaTiO3 thin films on the fused quartz substrate was measured by ac-hot probe method. Phase transition temperature, excess entropy and spontaneous polarization were determined as a function of film thickness…
We report on the systematic characterization of Ba(Fe$_{0.92}$Co$_{0.08}$)$_2$As$_2$ epitaxial thin films on CaF$_2$ substrate in view of their possible use for superconducting electronic applications. By using different and complementary…
We have analyzed the morphology of ferroelectric domains in very thin films of multiferroic BiFeO3. Unlike the more common stripe domains observed in thicker films BiFeO3 or in other ferroics, the domains tend not to be straight, but…
Atomic Force Microscopy (AFM) in the tapping (intermittent contact) mode is a commonly used tool to measure the thickness of graphene and few layer graphene (FLG) flakes on silicon oxide surfaces. It is a convenient tool to quickly…
The present work investigates the morphological, micro-structural, compositional and fractal analysis for CsI thin films in case of "as-deposited" and "1 hour humid air aged". The variation of grain sizes obtained from transmission electron…
Simple vacuum evaporation technique for deposition of dyes on various solid surfaces has been developed. The method is compatible with conventional solvent-free nanofabrication processing enabling fabrication of nanoscale optoelectronic…
Atomic layer deposition of ultrathin HfO2 on unmodified graphene from HfCl4 and H2O was investigated. Surface RMS roughness down to 0.5 nm was obtained for amorphous, 30 nm thick hafnia film grown at 180 degrees C. HfO2 was deposited also…
Experimental results on Bi2FeCrO6 (BFCO) epitaxial films deposited by laser ablation on SrTiO3 substrates are presented. It has been theoretically predicted using first-principles density functional theory that BFCO is ferrimagnetic (with a…
We prepared thin layers of amorphous silicon by deposition of a liquid-phase polysilane precurser on glass substrate. Raman scattering provides evidence for residual tensile stress in the silicon, which is evaluated quantitatively. Under…
The electrical conductance of molecular beam epitaxial Bi on BaF2(111) was measured as a function of both film thickness (4-540 nm) and temperature (5-300 K). Unlike bulk Bi as a prototype semimetal, the Bi thin films up to 90 nm are found…
Copper ferrite thin films were rf sputtered at a power of 50W. The as deposited films were annealed in air at 800{\deg}C and slow cooled. The transmission electron microscope (TEM) studies were carried out on as deposited as well as on slow…
Barium hexaferrite (BaFe12O19 or BaM) films were grown on c-plane sapphire (0001) substrates by pulsed laser deposition (PLD) to evaluate the effects of the laser fluence on their composition, structure, and magnetic properties. Continuum's…
Cryptocrystal layers of ammonium silicon fluoride (NH4)2SiF6 were grown on silicon wafers by dry etching using the vapors of HF:HNO3 solution at room temperature. As-grown layers are composed of white granular crystalline film with…
In the present work, HfO2 thin film (100nm) has been deposited by sputtering technique and annealed at various temperatures ranging from 400 to 1000\degree (in step of 200 \degree) in O2 ambient for 10 min. The samples have been…
We developed the models and algorithms to describe two main artefacts of AFM: (i) broadening effect and (ii) decreased heights of profiles for individual objects adsorbed on a hard substrate. It was shown how to measure elastic properties…
Thin films of gold were deposited on single crystalline CaF2 substrates of (100) and (111) orientation by thermal evaporation. The resulting film structure was analyzed by means of atomic force microscopy in dependence of substrate…