中文
相关论文

相关论文: Boron-doped diamond

200 篇论文

The development of color centers in diamond as the basis for emerging quantum technologies has been limited by the need for ion implantation to create the appropriate defects. We present a versatile method to dope diamond without ion…

To understand the crystal structure of n-diamond, a hydrogen-doped (H-doped) diamond model has been investigated using first principles calculations. In particular, hydrogen concentration dependent elastic constants and lattice parameters…

材料科学 · 物理学 2015-05-27 Bin Wen , Roderick Melnik , Shan Yao , Tingju Li

The insulator to metal transition in LaTiO_3 induced by La substitution via Sr is studied within multi-band exact diagonalization dynamical mean field theory at finite temperatures. It is shown that weak hole doping triggers a large…

强关联电子 · 物理学 2009-11-13 A. Liebsch

We observe the electron spin resonance of conduction electrons in boron doped (6400 ppm) superconducting diamond (Tc =3.8 K). We clearly identify the benchmarks of conduction electron spin resonance (CESR): the nearly temperature…

We examine the effect of boron doping in superconducting forms of amorphous carbon. By judiciously optimizing boron substitutional sites in simulated amorphous carbon we predict a superconducting transition temperature near 37 K at 14 %…

超导电性 · 物理学 2018-02-07 Yuki Sakai , James R. Chelikowsky , Marvin L. Cohen

It has been reported that upon doping a Mott insulator, there can be a crossover to a pseudogaped metallic phase followed by a first-order transition to another thermodynamically stable metallic phase. We call this first-order metal-metal…

强关联电子 · 物理学 2024-09-16 P. -O. Downey , O. Gingras , C. -D. Hébert , M. Charlebois , A. -M. S. Tremblay

When electron doped, the layered transition metal nitrides ${\cal T}$NCl (${\cal T}$ = group IVB transition metal ion) become impressive superconductors with critical temperature T$_c$= 15-26K. Here we take the most studied member, ZrNCl,…

超导电性 · 物理学 2015-06-22 Antia S. Botana , Warren E. Pickett

We study the electronic state of the doped Mott-Hubbard insulator within Dynamical Mean Field Theory. The evolution of the finite temperature spectral functions as a function of doping show large redistributions of spectral weight in both…

强关联电子 · 物理学 2009-11-11 A. Camjayi , R. Chitra , M. J. Rozenberg

Study and comparison of over 30 examples of electron doped BaFe2As2 for transition metal (TM) = Co, Ni, Cu, and (Co/Cu mixtures) have lead to an understanding that the suppression of the structural/antiferromagnetic phase transition to low…

超导电性 · 物理学 2009-08-04 P. C. Canfield , S. L. Bud'ko , N. Ni , J. Q. Yan , A. Kracher

The technological settings of a modified sol-gel method for preparation of highly fine homogeneous powder Ca2CuO3 doped with uranium 238 (x=0-0.05) is presented. The analysis of structure, purity of phases and the justification for the role…

We report a study of the relaxation time of the restoration of the resistive superconducting state in single crystalline boron-doped diamond using amplitude-modulated absorption of (sub-)THz radiation (AMAR). The films grown on an…

We derived a simple metal-insulator criterion in analytical form for the doped Mott-Hubbard materials. Its readings closely related to the orbital and spin nature of the ground states of the unit cell. The available criterion readings…

强关联电子 · 物理学 2015-06-23 V. A. Gavrichkov

The superconductivity transition temperatures Tc(onset) of 11.4 K and Tc(offset) of 7.4 K, which are the highest in diamond at present, are realized on homoepitaxially grown (111) diamond films with a high boron doping concentration of…

Comparison of periodic B dopants with a random alloy of substitional boron in diamond is carried out using several supercells and the coherent potential approximation (CPA) for the random alloy case. The main peak in the B local density of…

超导电性 · 物理学 2007-05-23 K. -W. Lee , W. E. Pickett

Expressions for dependences of the pre-exponential factor \sigma_3 and the thermal activation energy \epsilon_3 of hopping electric conductivity of holes via boron atoms on the boron atom concentration N and the compensation ratio K are…

材料科学 · 物理学 2011-09-06 N. A. Poklonski , S. A. Vyrko , A. G. Zabrodskii

We consider how electron-phonon interaction influences the insulator-metal transitions driven by doping in the strongly correlated system. Using the polaronic version of the generalized tight-binding method, we investigate a multiband…

强关联电子 · 物理学 2021-11-09 E. I. Shneyder , M. V. Zotova , S. V. Nikolaev , S. G. Ovchinnikov

Heavily-boron-doped diamond films become superconducting with critical temperatures $T_c$ well above 4 K. Here we first measure the reflectivity of such a film down to 5 cm$^{-1}$, by also using Coherent Synchrotron Radiation. We thus…

超导电性 · 物理学 2009-11-11 M. Ortolani , S. Lupi , L. Baldassarre , P. Calvani , U. Schade , Y. Takano , M. Nagao , T. Takenouchi , H. Kawarada

We have studied zig-zag boron nitride (BN) nanotubes doped with the Ni hexagonal-closepacked nanowire. The doped BN nanotubes are ferromagnetic metals with substantial magnetism. Some special magnetic properties resulting from the…

材料科学 · 物理学 2007-05-23 H. J. Xiang , Jinlong Yang , J. G. Hou , Qingshi Zhu

Polarized negative muons were used to study the behaviour of the boron acceptor centre in synthetic diamond produced by the chemical vapour deposition (CVD) method. The negative muon substitutes one of the electrons in a carbon atom, and…

We study the evolution of the spectral function with progressive hole doping in a Mott insulator, $La_{1-x}Ca_xVO_3$ with $x$ = 0.0 - 0.5. The spectral features indicate a bulk-to-surface metal-insulator transition in this system. Doping…

强关联电子 · 物理学 2009-10-31 K. Maiti , Priya Mahadevan , D. D. Sarma